<p>Altermagnetism, a recently discovered class of magnetic order characterized by vanishing net magnetization and spin-splitting band structures, has garnered significant research attention. In this work, we introduce a novel two-dimensional system that exhibits <i>g</i>-wave altermagnetism and undergoes a strain-induced transition from <i>g</i>-wave to <i>d</i>-wave altermagnetism. This system can be realized in an unconventional monolayer Cairo pentagonal lattice, for which we present a realistic tight-binding model that incorporates both magnetic and non-magnetic sites. Furthermore, we demonstrate that non-trivial band topology can emerge in this system by breaking the symmetry that protects the spin-polarized nodal points. Finally, ab initio calculations on several candidate materials, such as FeS<sub>2</sub> and Nb<sub>2</sub>FeB<sub>2</sub>, which exhibit symmetry consistent with the proposed tight-binding Hamiltonian, are also presented. These findings open new avenues for exploring spintronic devices based on altermagnetic systems.</p>

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Altermagnetism and strain induced altermagnetic transition in Cairo pentagonal monolayer

  • Shuyi Li,
  • Yu Zhang,
  • Adrian Bahri,
  • Xiaoliang Zhang,
  • Chunjing Jia

摘要

Altermagnetism, a recently discovered class of magnetic order characterized by vanishing net magnetization and spin-splitting band structures, has garnered significant research attention. In this work, we introduce a novel two-dimensional system that exhibits g-wave altermagnetism and undergoes a strain-induced transition from g-wave to d-wave altermagnetism. This system can be realized in an unconventional monolayer Cairo pentagonal lattice, for which we present a realistic tight-binding model that incorporates both magnetic and non-magnetic sites. Furthermore, we demonstrate that non-trivial band topology can emerge in this system by breaking the symmetry that protects the spin-polarized nodal points. Finally, ab initio calculations on several candidate materials, such as FeS2 and Nb2FeB2, which exhibit symmetry consistent with the proposed tight-binding Hamiltonian, are also presented. These findings open new avenues for exploring spintronic devices based on altermagnetic systems.