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<p>We present our study of (0001) oriented Mn<sub>3</sub>Sn (c-Mn<sub>3</sub>Sn) thin films synthesized directly on an MgO (111) substrate via molecular beam epitaxy. We identify a growth window where Mn<sub>3</sub>Sn growth can be controlled through slight adjustments of the Mn flux, achieving either μm²-sized high crystalline-quality islands or an almost completely continuous film. High-resolution X-ray diffraction results indicate that both films are highly (0001) oriented. The atomic resolution images show clear film-substrate interfaces displaying an epitaxial relationship. Scanning precession electron diffraction measurements reveal that the island featured sample has highly crystallized Mn<sub>3</sub>Sn. The sample featuring a high continuity exhibits defects in some areas but retains the dominant Mn<sub>3</sub>Sn structure. This work demonstrates a potential method for synthesizing high crystalline-quality Mn<sub>3</sub>Sn films with substantial coverage, facilitating the study of Mn<sub>3</sub>Sn films without the influence of an additional buffer layer and promoting their application in integrated spintronics.</p>

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Tailoring MBE growth of c-Mn3Sn directly on MgO (111) from islands to film

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年4月24日

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  • Longfei He,
  • Ursula Ludacka,
  • Payel Chatterjee,
  • Matthias Hartl,
  • Dennis Meier,
  • Christoph Brüne

摘要

We present our study of (0001) oriented Mn3Sn (c-Mn3Sn) thin films synthesized directly on an MgO (111) substrate via molecular beam epitaxy. We identify a growth window where Mn3Sn growth can be controlled through slight adjustments of the Mn flux, achieving either μm²-sized high crystalline-quality islands or an almost completely continuous film. High-resolution X-ray diffraction results indicate that both films are highly (0001) oriented. The atomic resolution images show clear film-substrate interfaces displaying an epitaxial relationship. Scanning precession electron diffraction measurements reveal that the island featured sample has highly crystallized Mn3Sn. The sample featuring a high continuity exhibits defects in some areas but retains the dominant Mn3Sn structure. This work demonstrates a potential method for synthesizing high crystalline-quality Mn3Sn films with substantial coverage, facilitating the study of Mn3Sn films without the influence of an additional buffer layer and promoting their application in integrated spintronics.