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<p>Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to loss at surfaces and interfaces. Here, parallel plate capacitors composed of aluminum-contacted, crystalline silicon fins are shown to be a promising technology for use in superconducting circuits by evaluating the performance of lumped element resonators and transmon qubits. High aspect ratio Si-fin capacitors having widths below 300 nm with an approximate total height of 3 <i>μ</i>m are fabricated using anisotropic wet etching of Si(110) substrates followed by aluminum metallization. The single-crystal Si capacitors are incorporated in lumped element resonators and transmons by shunting them with lithographically patterned aluminum inductors and conventional <i>A</i><i>l</i>/<i>A</i><i>l</i><i>O</i><sub><i>x</i></sub>/<i>A</i><i>l</i> Josephson junctions respectively. Microwave characterization of these devices suggests state-of-the-art performance for superconducting parallel plate capacitors with low power internal quality factor of lumped element resonators greater than 500 k and qubit <i>T</i><sub>1</sub> times greater than 25 μs. These results suggest that Si-Fins are a promising technology for applications that require low-loss, compact, superconductor-based capacitors with minimal stray capacitance.</p>

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Fabrication and characterization of low-loss Al/Si/Al parallel plate capacitors for superconducting quantum information applications

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年1月22日

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  • Anthony P. McFadden,
  • Aranya Goswami,
  • Tongyu Zhao,
  • Teun van Schijndel,
  • Trevyn F. Q. Larson,
  • Sudhir Sahu,
  • Stephen Gill,
  • Florent Lecocq,
  • Raymond Simmonds,
  • Chris Palmstrøm

摘要

Increasing the density of superconducting circuits requires compact components, however, superconductor-based capacitors typically perform worse as dimensions are reduced due to loss at surfaces and interfaces. Here, parallel plate capacitors composed of aluminum-contacted, crystalline silicon fins are shown to be a promising technology for use in superconducting circuits by evaluating the performance of lumped element resonators and transmon qubits. High aspect ratio Si-fin capacitors having widths below 300 nm with an approximate total height of 3 μm are fabricated using anisotropic wet etching of Si(110) substrates followed by aluminum metallization. The single-crystal Si capacitors are incorporated in lumped element resonators and transmons by shunting them with lithographically patterned aluminum inductors and conventional Al/AlOx/Al Josephson junctions respectively. Microwave characterization of these devices suggests state-of-the-art performance for superconducting parallel plate capacitors with low power internal quality factor of lumped element resonators greater than 500 k and qubit T1 times greater than 25 μs. These results suggest that Si-Fins are a promising technology for applications that require low-loss, compact, superconductor-based capacitors with minimal stray capacitance.