Quantifying the effect of gate errors on variational quantum eigensolvers for quantum chemistry
摘要
Variational quantum eigensolvers (VQEs) are leading candidates to demonstrate near-term quantum advantage. Here, we conduct density-matrix simulations of leading gate-based VQEs for a range of molecules. We numerically quantify their level of tolerable depolarizing gate-errors. We find that: (i) The best-performing VQEs require gate-error probabilities between 10−6 and 10−4 (10−4 and 10−2 with error mitigation) to predict, within chemical accuracy, ground-state energies of small molecules with 4 − 14 orbitals. (ii) ADAPT-VQEs that construct ansatz circuits iteratively outperform fixed-circuit VQEs. (iii) ADAPT-VQEs perform better with circuits constructed from gate-efficient rather than physically-motivated elements. (iv) The maximally-allowed gate-error probability, pc, for any VQE to achieve chemical accuracy decreases with the number NII of noisy two-qubit gates as