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<p>Polarity engineering of transition metal dichalcogenide field-effect transistors (FETs) has become a key requirement for complementary logic. Here, we report the polarity control of flexible tungsten diselenide (WSe<sub>2</sub>) FETs with atomic layer deposited (ALD) top-gate dielectrics. We identify evaporated WO<sub>x</sub> as suitable seeds for ALD top-gates enabling p-channel WSe<sub>2</sub> FETs, while evaporated Al seeds lead to n-channel FETs. Our flexible p-channel FETs achieve good drain current on/off ratio up to 10<sup>6</sup>, enhancement-mode operation with a negative threshold voltage, and low off-current down to ~6 × 10<sup>−</sup><sup>7 </sup>µA/µm, which are important for low-power operation. Combining both seed layers in one fabrication process, we demonstrate flexible WSe<sub>2</sub> complementary metal-oxide-semiconductor (CMOS) inverters. Our inverters show good switching behavior with voltage gain up to 65 and total noise margin up to ~88%. Overall, this study provides a strategy on polarity engineering of flexible WSe<sub>2</sub> FETs and highlights the potential of flexible complementary WSe<sub>2</sub> electronics.</p>

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Seed-assisted polarity control of flexible WSe2 transistors and demonstration of CMOS inverter

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月20日

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  • Quỳnh Thị Phùng,
  • Kha Minh Nguyen,
  • Ji-Yong Park,
  • Alwin Daus

摘要

Polarity engineering of transition metal dichalcogenide field-effect transistors (FETs) has become a key requirement for complementary logic. Here, we report the polarity control of flexible tungsten diselenide (WSe2) FETs with atomic layer deposited (ALD) top-gate dielectrics. We identify evaporated WOx as suitable seeds for ALD top-gates enabling p-channel WSe2 FETs, while evaporated Al seeds lead to n-channel FETs. Our flexible p-channel FETs achieve good drain current on/off ratio up to 106, enhancement-mode operation with a negative threshold voltage, and low off-current down to ~6 × 10−7 µA/µm, which are important for low-power operation. Combining both seed layers in one fabrication process, we demonstrate flexible WSe2 complementary metal-oxide-semiconductor (CMOS) inverters. Our inverters show good switching behavior with voltage gain up to 65 and total noise margin up to ~88%. Overall, this study provides a strategy on polarity engineering of flexible WSe2 FETs and highlights the potential of flexible complementary WSe2 electronics.