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<p>Electrolyte-gated transistors (EGTs) are typically limited to p-type operation, with stable n-type devices remaining scarce. In this study, we demonstrate high-performance n-type EGTs using a poly(benzimidazobenzophenanthroline) (BBL) polymer semiconductor gated by ionogel electrolytes. Electrochemical doping in BBL induces ion pathways in amorphous regions during initial doping, facilitating efficient electron transport. This yields exceptional device performance, including a geometry-normalized transconductance of 4.6 S cm<sup>−1</sup>, an ON/OFF ratio of ≈10<sup>5</sup>, a product of electron mobility and volumetric capacitance (μC* ≈ 16.4 F cm<sup>–1</sup> V<sup>–1</sup> s<sup>–1</sup>), and minimal hysteresis (&lt;0.1 V). These features surpass most reported n-type EGTs, demonstrating the importance of ion-driven electrochemical doping in BBL. Furthermore, we not only fabricate all-polymer complementary inverters, NAND, and NOR gates but also demonstrate flexible circuits by integrating n-type BBL and p-type polythiophene EGTs.</p>

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Sub-1V, flexible, all-polymer complementary logic circuits based on electrolyte-gated transistors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月16日

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  • Su Jung Kim,
  • Dong Hyun Park,
  • Yu Na Lee,
  • Min Su Kim,
  • Kihyon Hong,
  • Kyung Gook Cho,
  • C. Daniel Frisbie,
  • Keun Hyung Lee

摘要

Electrolyte-gated transistors (EGTs) are typically limited to p-type operation, with stable n-type devices remaining scarce. In this study, we demonstrate high-performance n-type EGTs using a poly(benzimidazobenzophenanthroline) (BBL) polymer semiconductor gated by ionogel electrolytes. Electrochemical doping in BBL induces ion pathways in amorphous regions during initial doping, facilitating efficient electron transport. This yields exceptional device performance, including a geometry-normalized transconductance of 4.6 S cm−1, an ON/OFF ratio of ≈105, a product of electron mobility and volumetric capacitance (μC* ≈ 16.4 F cm–1 V–1 s–1), and minimal hysteresis (<0.1 V). These features surpass most reported n-type EGTs, demonstrating the importance of ion-driven electrochemical doping in BBL. Furthermore, we not only fabricate all-polymer complementary inverters, NAND, and NOR gates but also demonstrate flexible circuits by integrating n-type BBL and p-type polythiophene EGTs.