Phase transition and electrical conversion properties of Ge/Sb nano-multilayer films on flexible substrates

Flexible information memory is the key component of flexible electronic devices and the core of intelligent wearable devices. In this paper, Ge/Sb multilayer phase change films of various thickness ratios were prepared using polyether ether ketone as substrate, and their flexible phase change properties and device conversion characteristics were studied. After bending for 100000 times and bending experiments with different bending radius, the film can still realize the transition from amorphous to crystalline states, and the resistance fluctuation was small. Bending, stretching and pressing of the film resulted in grain refinement and increasing of crystalline resistance. The flexible electronic devices using Ge/Sb multilayer films were prepared. The phase change memory device can realize reversible conversion between SET and RESET states with different pulse widths in flat, bent states and after bending many times. All findings show that Ge/Sb multilayer films on PEEK substrate have broad application prospects in high-performance flexible memory in the future.