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<p>The growth of compositionally uniform InAs<sub>1-x</sub>Sb<sub>x</sub> bulk crystals remains a formidable challenge due to severe solute segregation and morphological instability under terrestrial conditions. Here, we report the successful growth of a single-crystalline InAs<sub>0.933</sub>Sb<sub>0.067</sub> alloy (<i>x</i> = 6.7 mol%) on an InAs seed via the vertical gradient freeze method aboard the China Space Station. Crucially, microgravity enables diffusion-dominated solidification by suppressing buoyancy-driven convection. As a direct consequence, the crystal is free of macroscopic voids and striations, exhibits a tenfold reduction in dislocation density, and maintains Sb compositional uniformity (±0.5 mol%) over its entire ~11 mm diameter and ~2.5 mm growth length. Moreover, the microgravity-grown crystal outperforms its terrestrial counterpart in both crystalline quality and electrical properties. These findings highlight that microgravity provides a unique pathway to overcome the intrinsic limitations of ground-based growth, enabling crystal quality unattainable on Earth — with potential relevance to advanced optoelectronic applications.</p>

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Microgravity-enabled growth of uniform InAsSb bulk single crystal

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月25日

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  • Jidong Huang,
  • Huaiwen Zheng,
  • Zhigang Yin,
  • Jinliang Wu,
  • Zhengchang Xia,
  • Xiuhong Pan,
  • Ji Jiang,
  • Dianchen Zhu,
  • Meibo Tang,
  • Xuechao Liu,
  • Xingwang Zhang

摘要

The growth of compositionally uniform InAs1-xSbx bulk crystals remains a formidable challenge due to severe solute segregation and morphological instability under terrestrial conditions. Here, we report the successful growth of a single-crystalline InAs0.933Sb0.067 alloy (x = 6.7 mol%) on an InAs seed via the vertical gradient freeze method aboard the China Space Station. Crucially, microgravity enables diffusion-dominated solidification by suppressing buoyancy-driven convection. As a direct consequence, the crystal is free of macroscopic voids and striations, exhibits a tenfold reduction in dislocation density, and maintains Sb compositional uniformity (±0.5 mol%) over its entire ~11 mm diameter and ~2.5 mm growth length. Moreover, the microgravity-grown crystal outperforms its terrestrial counterpart in both crystalline quality and electrical properties. These findings highlight that microgravity provides a unique pathway to overcome the intrinsic limitations of ground-based growth, enabling crystal quality unattainable on Earth — with potential relevance to advanced optoelectronic applications.