Scholarlink

<p>2D altermagnets, characterized by the combined advantages of ferromagnetic spin splitting, antiferromagnetic vanishing magnetization, and high intrinsic frequencies, fulfill the requirements for next-generation miniaturized spintronic devices with femtosecond response time, stability, and high speed. In this study, we employed a combined approach of first-principles calculations, real-time time-dependent density functional theory (rt-TDDFT), and nonadiabatic molecular dynamics (NAMD) to simulate the magnetic order-dependent ultrafast femtosecond laser excitation of the Cr<sub>2</sub>Se<sub>2</sub>O monolayer. Our simulations indicate that the spin relaxation time in the altermagnetic phase (718 fs) is markedly longer than those in the two conventional antiferromagnetic phases (202 fs and 498 fs). We further reveal that the reduced spin-orbit coupling (SOC) effect between spin-majority and spin-minority band edges in the altermagnetic phase suppresses the spin-flip process, thereby prolonging the photoexcitation spin relaxation time. These findings provide a microscopic perspective on the spin dynamics of photoexcited altermagnets and open avenues for enhancing the reliability and stability of spintronic storage devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Ultrafast spin dynamics in altermagnetic Cr2Se2O monolayer

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年5月8日

查看全文
  • Tianxia Guo,
  • Yinlu Gao,
  • Jijun Zhao,
  • Xue Jiang

摘要

2D altermagnets, characterized by the combined advantages of ferromagnetic spin splitting, antiferromagnetic vanishing magnetization, and high intrinsic frequencies, fulfill the requirements for next-generation miniaturized spintronic devices with femtosecond response time, stability, and high speed. In this study, we employed a combined approach of first-principles calculations, real-time time-dependent density functional theory (rt-TDDFT), and nonadiabatic molecular dynamics (NAMD) to simulate the magnetic order-dependent ultrafast femtosecond laser excitation of the Cr2Se2O monolayer. Our simulations indicate that the spin relaxation time in the altermagnetic phase (718 fs) is markedly longer than those in the two conventional antiferromagnetic phases (202 fs and 498 fs). We further reveal that the reduced spin-orbit coupling (SOC) effect between spin-majority and spin-minority band edges in the altermagnetic phase suppresses the spin-flip process, thereby prolonging the photoexcitation spin relaxation time. These findings provide a microscopic perspective on the spin dynamics of photoexcited altermagnets and open avenues for enhancing the reliability and stability of spintronic storage devices.