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<p>Driven by the growing demand for lower power consumption and higher integration density in electronic circuits of the post-Moore era, nanoscale spin field-effect transistors (spin-FETs) have emerged as a promising candidate for next-generation spintronic devices. However, realizing such nanoscale spin-FETs and achieving effective control of spin polarization in them remain a critical challenge. In this theoretical study, we design nanoscale spin-FETs by contacting a bipolar magnetic semiconductor (BMS) LaBr<sub>2</sub> monolayer channel with four different two-dimensional metallic electrodes. Their interface and spin transport properties are investigated by first-principles calculations. Owing to the distinct work functions of the electrode materials, both <i>n</i>- and <i>p</i>-type Ohmic contacts are achieved, enabling fully spin-polarized currents—either spin-up or spin-down—across the devices. Moreover, the spin polarization direction of the current can be reversed by applying a gate voltage. Our calculations show that for the spin-FET with ZrTe<sub>2</sub> electrodes, both the ON-state and OFF-state spin-up polarized currents satisfy the IRDS criteria for high-performance FET devices at both low and room temperatures. Additionally, the spin-polarized current of this device exhibits excellent gate response, with subthreshold swings of 49.3 mV/dec at low temperature and 70.6 mV/dec at room temperature. These superior performances are retained even when the LaBr<sub>2</sub> channel length is scaled down to 3 nm. This work provides a theoretical foundation for the development of nanoscale spin-FETs based on two-dimensional BMS materials and offers guidance for future experimental explorations in next-generation spintronic circuits.</p>

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Gate-controlled spin-polarization reversal in high-performance nanoscale field-effect transistors with a bipolar magnetic semiconductor LaBr2 channel

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月29日

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  • Shao-Xian Wang,
  • Ya-Qi Kong,
  • Shun-Bo Jiang,
  • Ming-Lang Wang,
  • Ming-Zhi Wei,
  • Gang Chen,
  • Chuan-Kui Wang,
  • Guang-Ping Zhang

摘要

Driven by the growing demand for lower power consumption and higher integration density in electronic circuits of the post-Moore era, nanoscale spin field-effect transistors (spin-FETs) have emerged as a promising candidate for next-generation spintronic devices. However, realizing such nanoscale spin-FETs and achieving effective control of spin polarization in them remain a critical challenge. In this theoretical study, we design nanoscale spin-FETs by contacting a bipolar magnetic semiconductor (BMS) LaBr2 monolayer channel with four different two-dimensional metallic electrodes. Their interface and spin transport properties are investigated by first-principles calculations. Owing to the distinct work functions of the electrode materials, both n- and p-type Ohmic contacts are achieved, enabling fully spin-polarized currents—either spin-up or spin-down—across the devices. Moreover, the spin polarization direction of the current can be reversed by applying a gate voltage. Our calculations show that for the spin-FET with ZrTe2 electrodes, both the ON-state and OFF-state spin-up polarized currents satisfy the IRDS criteria for high-performance FET devices at both low and room temperatures. Additionally, the spin-polarized current of this device exhibits excellent gate response, with subthreshold swings of 49.3 mV/dec at low temperature and 70.6 mV/dec at room temperature. These superior performances are retained even when the LaBr2 channel length is scaled down to 3 nm. This work provides a theoretical foundation for the development of nanoscale spin-FETs based on two-dimensional BMS materials and offers guidance for future experimental explorations in next-generation spintronic circuits.