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<p>Suppressing critical current density (<i>J</i><sub>c</sub>) fluctuations in Josephson junctions is essential for improving the reproducibility and scalability of superconducting quantum processors. Despite many elucidations of microscopic mechanisms, the physical modulation of <i>J</i><sub>c</sub> by atomic-scale disorder at the metal-insulator interface remains elusive. Here, we reveal that interfacial bonding topology distortions are the dominant source that regulates <i>J</i><sub>c</sub> uniformity. We identify a new disorder metric, Interface Bonding Topology Factor (IBTF), that captures bond-angle fluctuations and oxygen-coordination heterogeneity within <i>J</i><sub>c</sub> variations. Through multivariate analysis, <i>J</i><sub>c</sub> is exponentially correlated with interface disorder and barrier thickness (<i>d</i>) by <i>J</i><sub>c</sub> ∝ <i>e</i><sup>−IBTF⋅<i>d</i></sup>, explaining 91.88% of the observed <i>J</i><sub>c</sub> inhomogeneity. We establish IBTF as a tunable physical degree of freedom whose suppression efficacy enhances significantly with increasing <i>d</i>, and demonstrate its active modulation by twin boundary engineering in electrodes. This work provides a device-oriented strategy and a tunable physical metric beyond single-feature control for scalable high-performance quantum processors.</p>

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Revealing the role of interface disorder in modulating critical current density of Josephson junctions

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月6日

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  • Chuanbing Han,
  • Huihui Sun,
  • Yonglong Shen,
  • Junling Qiu,
  • Peng Xu,
  • Fudong Liu,
  • Bo Zhao,
  • Xiaohan Yu,
  • Weilong Wang,
  • Shuya Wang,
  • Qing Mu,
  • Benzheng Yuan,
  • Lixin Wang,
  • Chaofeng Hou,
  • Zheng Shan

摘要

Suppressing critical current density (Jc) fluctuations in Josephson junctions is essential for improving the reproducibility and scalability of superconducting quantum processors. Despite many elucidations of microscopic mechanisms, the physical modulation of Jc by atomic-scale disorder at the metal-insulator interface remains elusive. Here, we reveal that interfacial bonding topology distortions are the dominant source that regulates Jc uniformity. We identify a new disorder metric, Interface Bonding Topology Factor (IBTF), that captures bond-angle fluctuations and oxygen-coordination heterogeneity within Jc variations. Through multivariate analysis, Jc is exponentially correlated with interface disorder and barrier thickness (d) by Jc ∝ e−IBTF⋅d, explaining 91.88% of the observed Jc inhomogeneity. We establish IBTF as a tunable physical degree of freedom whose suppression efficacy enhances significantly with increasing d, and demonstrate its active modulation by twin boundary engineering in electrodes. This work provides a device-oriented strategy and a tunable physical metric beyond single-feature control for scalable high-performance quantum processors.