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<p>One of the key technology enablers for achieving three-dimensional (3D) Dynamic Random Access Memory is the development of dielectric materials with high permittivity, low leakage current, and a low thermal budget. In this work, theoretical analysis reveals that a substitutional doping configuration is crucial to enable the realization of a morphotropic phase boundary (MPB) and low thermal budget. Guided by this, we present the fabrication of a La-doped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) dielectric with a record-high permittivity of ~83 at a low thermal budget (~450 °C). The film has a physical thickness of 10 nm (EOT = 0.46 nm) and demonstrates a low leakage current of 1E-6 A/cm<sup>2</sup> at 1 V. Reliability assessments suggest that our films can be stable up to 2.25 V with a 0.01% failure rate and a dielectric area of 0.1 cm<sup>2</sup> for over 10 years. The successful development of this dielectric establishes a strong foundation for future transistors, memories, and their 3D integration.</p>

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Design rule for morphotropic phase boundary formation in Hf-based material system with high permittivity, low leakage and low thermal budget

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月16日

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  • Maokun Wu,
  • Sheng Ye,
  • Xuepei Wang,
  • Jinhao Liu,
  • Yilin Hu,
  • Haobo Lin,
  • Boyao Cui,
  • Yichen Wen,
  • Yishan Wu,
  • Ting Zhang,
  • Hong Dong,
  • Feng Lu,
  • Wei-Hua Wang,
  • Pengpeng Ren,
  • Hong-Liang Lu,
  • Zhongming Liu,
  • Runsheng Wang,
  • Zhigang Ji

摘要

One of the key technology enablers for achieving three-dimensional (3D) Dynamic Random Access Memory is the development of dielectric materials with high permittivity, low leakage current, and a low thermal budget. In this work, theoretical analysis reveals that a substitutional doping configuration is crucial to enable the realization of a morphotropic phase boundary (MPB) and low thermal budget. Guided by this, we present the fabrication of a La-doped Hf0.5Zr0.5O2 (HZO) dielectric with a record-high permittivity of ~83 at a low thermal budget (~450 °C). The film has a physical thickness of 10 nm (EOT = 0.46 nm) and demonstrates a low leakage current of 1E-6 A/cm2 at 1 V. Reliability assessments suggest that our films can be stable up to 2.25 V with a 0.01% failure rate and a dielectric area of 0.1 cm2 for over 10 years. The successful development of this dielectric establishes a strong foundation for future transistors, memories, and their 3D integration.