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<p>The search for materials supporting ultrafast charge transport has long driven the development of nanoelectronics. Since the isolation of graphene, numerous efforts have focused on expanding the class of linearly dispersive layered materials while scaling their electronic properties to the unit-cell limit. Here, we demonstrate that atomically thin layers of antiferromagnetic NdTe<sub>3</sub> can be isolated onto Au films, down to a single unit cell, through enhanced adhesion. Exfoliation using discontinuous Au films furthermore enables direct electrical transport measurements. Magnetotransport reveals the persistence of Shubnikov-de Haas oscillations in atomically thin samples. Despite suppressed residual resistivity ratio and magnetoresistance relative to bulk crystals, we observe no significant modifications of the electronic structure, with linear dispersive bands persisting across all thicknesses. Multiple spin-zero effects from distinct Fermi pockets further indicate an enhanced effective g-factor that may extend to other members of the RTe<sub>3</sub> family.</p>

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Linearly dispersing carriers in atomically thin NdTe3

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年8月5日

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  • Oleksandr Zheliuk,
  • Yuliia Kreminska,
  • Davide Pizzirani,
  • Claudius S. A. Müller,
  • Pim van den Berg,
  • Sardar Hameed,
  • Puhua Wan,
  • Xiaoli Peng,
  • Shiming Lei,
  • Sergii Grytsiuk,
  • Leslie M. Schoop,
  • Malte Rösner,
  • Uli Zeitler,
  • Steffen Wiedmann,
  • Jianting Ye

摘要

The search for materials supporting ultrafast charge transport has long driven the development of nanoelectronics. Since the isolation of graphene, numerous efforts have focused on expanding the class of linearly dispersive layered materials while scaling their electronic properties to the unit-cell limit. Here, we demonstrate that atomically thin layers of antiferromagnetic NdTe3 can be isolated onto Au films, down to a single unit cell, through enhanced adhesion. Exfoliation using discontinuous Au films furthermore enables direct electrical transport measurements. Magnetotransport reveals the persistence of Shubnikov-de Haas oscillations in atomically thin samples. Despite suppressed residual resistivity ratio and magnetoresistance relative to bulk crystals, we observe no significant modifications of the electronic structure, with linear dispersive bands persisting across all thicknesses. Multiple spin-zero effects from distinct Fermi pockets further indicate an enhanced effective g-factor that may extend to other members of the RTe3 family.