Scholarlink

<p>Resistive switching is the basis of many emerging memory technologies. However, its operation at cryogenic temperatures remains scarce, and it generally lacks compatibility with optical control and in-situ electrical programmability. Here, we report the discovery of a photo-activated digital resistive switching effect in a cryogenic photomemory based on α-In<sub>2</sub>Se<sub>3</sub>. After an optical pulse, the device can be repeatably switched from a high- to a low-resistance state digitally, which persists long after the photoactivation. The switching threshold voltage can be continuously tuned over a wide range by the reset voltage pulse, additional optical pulses, and electrostatic gating, providing multimodal control over the memory logic. The device also exhibits a markedly enhanced photoresponse and resettable persistent photoconductivity, allowing the emulation of synaptic behaviors at cryogenic temperatures. Our work reveals a defect-mediated mechanism for embedding programmable digital logic into a nonvolatile photomemory, establishing a versatile platform for adaptive optoelectronics at cryogenic temperatures.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Photo-activated digital resistive switching in a cryogenic photomemory

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月28日

查看全文
  • Jiarui Wang,
  • Yu-Ting Huang,
  • Yuhao Li,
  • Meiyu Wang,
  • Shengsheng Lin,
  • Yuanhao Wei,
  • Jingjing Chang,
  • Yun Li,
  • Fengqiu Wang,
  • Songlin Li,
  • Xian-Bin Li,
  • Xinran Wang,
  • Yi Shi,
  • Zaiyao Fei

摘要

Resistive switching is the basis of many emerging memory technologies. However, its operation at cryogenic temperatures remains scarce, and it generally lacks compatibility with optical control and in-situ electrical programmability. Here, we report the discovery of a photo-activated digital resistive switching effect in a cryogenic photomemory based on α-In2Se3. After an optical pulse, the device can be repeatably switched from a high- to a low-resistance state digitally, which persists long after the photoactivation. The switching threshold voltage can be continuously tuned over a wide range by the reset voltage pulse, additional optical pulses, and electrostatic gating, providing multimodal control over the memory logic. The device also exhibits a markedly enhanced photoresponse and resettable persistent photoconductivity, allowing the emulation of synaptic behaviors at cryogenic temperatures. Our work reveals a defect-mediated mechanism for embedding programmable digital logic into a nonvolatile photomemory, establishing a versatile platform for adaptive optoelectronics at cryogenic temperatures.