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<p>Universal behavior in far-from-equilibrium systems is driven by interactions between transport processes and noise structure. The Kardar-Parisi-Zhang (KPZ) framework predicts that extensions incorporating conserved currents or temporally correlated noise give rise to distinct growth morphologies and universality classes, yet direct experimental realization has remained elusive. Here, we report atomically resolved Sn thin-film growth on Sb-doped MnBi<sub>2</sub>Te<sub>4</sub>, revealing a sharp dynamical crossover between two fundamentally different regimes. Early-stage growth follows Villain-Lai-Das Sarma (VLDS) scaling, forming two-dimensional islands and stanene layers. Beyond a critical deposition time, temporally correlated noise becomes the dominant factor, driving the nucleation of <i>α</i>-Sn clusters, their development into faceted grains, and the coexistence of faceted <i>β</i>-Sn. Molecular dynamics simulations and Auger electron spectroscopy reveal that adatom escape serves as the microscopic origin of this temporally correlated noise, offering a mechanism for the observed universality crossover. These findings establish that temporal noise correlations can fundamentally alter the universality class of a growing interface, linking atomistic kinetics to emergent universal behavior.</p>

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Escape-induced temporally correlated noise driven crossover in growth kinetics and universality class

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月18日

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  • Mrinal Manna,
  • Sourav Mukherjee,
  • Soumen Giri,
  • Pramod Bhakuni,
  • Sajal Barman,
  • Arnab Kumar Pariari,
  • Anil Gome,
  • Markus Hücker,
  • V. Raghavendra Reddy,
  • Anupam Roy,
  • Sudipta Roy Barman,
  • Smarajit Karmakar,
  • Chandana Mondal,
  • Rajib Batabyal

摘要

Universal behavior in far-from-equilibrium systems is driven by interactions between transport processes and noise structure. The Kardar-Parisi-Zhang (KPZ) framework predicts that extensions incorporating conserved currents or temporally correlated noise give rise to distinct growth morphologies and universality classes, yet direct experimental realization has remained elusive. Here, we report atomically resolved Sn thin-film growth on Sb-doped MnBi2Te4, revealing a sharp dynamical crossover between two fundamentally different regimes. Early-stage growth follows Villain-Lai-Das Sarma (VLDS) scaling, forming two-dimensional islands and stanene layers. Beyond a critical deposition time, temporally correlated noise becomes the dominant factor, driving the nucleation of α-Sn clusters, their development into faceted grains, and the coexistence of faceted β-Sn. Molecular dynamics simulations and Auger electron spectroscopy reveal that adatom escape serves as the microscopic origin of this temporally correlated noise, offering a mechanism for the observed universality crossover. These findings establish that temporal noise correlations can fundamentally alter the universality class of a growing interface, linking atomistic kinetics to emergent universal behavior.