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<p>Crystal structure engineering is pivotal for tailoring material properties, particularly in atomically thin two-dimensional (2D) transition-metal chalcogenides that exhibit rich, crystal-phase-dependent electronic, optical, and magnetic properties. However, their crystal-phase-controlled synthesis remains a critical challenge that limits their practical applications. Here, we report the phase-controlled synthesis of atomically thin chromium telluride films, including CrTe<sub>3</sub>, CrTe<sub>2</sub>, Cr<sub>1+δ</sub>Te<sub>2</sub>, and CrTe, on graphene/SiC substrates via precise tuning of molecular beam epitaxy parameters. The growth mechanism is further revealed. We have systematically characterized the different structures and electronic, chemical, and magnetic properties of these films using scanning tunneling microscopy/spectroscopy, scanning transmission electron microscopy, density functional theory calculations, X-ray photoelectron/absorption spectroscopy, and circular-polarized X-ray photoemission electron microscopy. Heterostructures of different chromium telluride phases are further fabricated, demonstrating band engineering enabled by phase control of chromium tellurides.</p>

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Phase engineering of atomically thin magnetic chromium tellurides via molecular beam epitaxy

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月10日

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  • Guangyao Miao,
  • Zongnan Zhang,
  • Yichen Jin,
  • Florian Kronast,
  • Kai Hu,
  • Pan Chen,
  • Dongdong Xiao,
  • José D. Cojal González,
  • Haojie Sun,
  • Chenxi Meng,
  • Wei Jiang,
  • Yugui Yao,
  • Qinlin Guo,
  • Jiandi Zhang,
  • Carlos-Andres Palma,
  • Weihua Wang,
  • Jürgen P. Rabe,
  • Jiandong Guo

摘要

Crystal structure engineering is pivotal for tailoring material properties, particularly in atomically thin two-dimensional (2D) transition-metal chalcogenides that exhibit rich, crystal-phase-dependent electronic, optical, and magnetic properties. However, their crystal-phase-controlled synthesis remains a critical challenge that limits their practical applications. Here, we report the phase-controlled synthesis of atomically thin chromium telluride films, including CrTe3, CrTe2, Cr1+δTe2, and CrTe, on graphene/SiC substrates via precise tuning of molecular beam epitaxy parameters. The growth mechanism is further revealed. We have systematically characterized the different structures and electronic, chemical, and magnetic properties of these films using scanning tunneling microscopy/spectroscopy, scanning transmission electron microscopy, density functional theory calculations, X-ray photoelectron/absorption spectroscopy, and circular-polarized X-ray photoemission electron microscopy. Heterostructures of different chromium telluride phases are further fabricated, demonstrating band engineering enabled by phase control of chromium tellurides.