Scholarlink

<p>We report the first demonstration of a semiconductor maser based on silicon vacancies (V<sub>Si</sub>) in 4H-silicon carbide (SiC). Using an active feedback loop, we enhance the resonator’s quality factor, enabling continuous-wave maser operation even above room temperature. We analyzed the SiC maser as a high-performance preamplifier, with measured gain exceeding 10 dB at 110 K and simulations suggesting potential amplification beyond 30 dB. Leveraging the small zero-field splitting of V<sub>Si</sub>, the device can also function as an optically pumped microwave photon absorber, reducing the resonator’s mode temperature by 40 K relative to the environment. Additionally, the maser’s ultranarrow linewidth supports highly sensitive magnetometry, achieving a nine-order-of-magnitude improvement in contrast-to-linewidth ratio over electrical and optical detection of magnetic resonance. This results in an estimated magnetic field sensitivity of 20 pT/√Hz at room-temperature based on the relative intensity noise of the excitation laser. These results underscore the potential of SiC to reshape room-temperature maser technologies, and lay the groundwork for future development of compact, electrically driven maser diodes.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Semiconductor room-temperature maser

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月25日

查看全文
  • Andreas Gottscholl,
  • Maximilian Wagenhöfer,
  • Valentin Baianov,
  • Emilian Eisermann,
  • Vladimir Dyakonov,
  • Andreas Sperlich

摘要

We report the first demonstration of a semiconductor maser based on silicon vacancies (VSi) in 4H-silicon carbide (SiC). Using an active feedback loop, we enhance the resonator’s quality factor, enabling continuous-wave maser operation even above room temperature. We analyzed the SiC maser as a high-performance preamplifier, with measured gain exceeding 10 dB at 110 K and simulations suggesting potential amplification beyond 30 dB. Leveraging the small zero-field splitting of VSi, the device can also function as an optically pumped microwave photon absorber, reducing the resonator’s mode temperature by 40 K relative to the environment. Additionally, the maser’s ultranarrow linewidth supports highly sensitive magnetometry, achieving a nine-order-of-magnitude improvement in contrast-to-linewidth ratio over electrical and optical detection of magnetic resonance. This results in an estimated magnetic field sensitivity of 20 pT/√Hz at room-temperature based on the relative intensity noise of the excitation laser. These results underscore the potential of SiC to reshape room-temperature maser technologies, and lay the groundwork for future development of compact, electrically driven maser diodes.