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<p>Efficient thermal management is essential for the reliability of modern power electronics, where increasing device density leads to severe heat dissipation challenges. However, in thin-film systems, thermal transport is often compromised by interfacial resistance and microscale defects introduced during synthesis or transfer, which are difficult to characterize using conventional techniques. Here we present a non-contact, spatiotemporal-resolved ultrafast X-ray diffraction method to extract in-plane thermal conductivity and thermal boundary conductance, using GaN thin films on silicon as a model system. By tracking the pump-induced lattice strain, we reconstruct the lateral heat flow dynamics and quantitatively probe thermal transport near a wrinkle defect. We uncover pronounced asymmetric heat dissipation across the wrinkle, with a four-fold reduction in the local thermal conductivity near the wrinkle and a 25% drop in interfacial conductance. Our work demonstrates that ultrafast X-ray diffraction can serve as a precise thermal metrology tool for characterizing heat transport in multilayered thin-film structures for next-generation microelectronic devices.</p>

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Spatiotemporal mapping of anisotropic thermal transport in GaN thin films via ultrafast X-ray diffraction

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年7月29日

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  • Thanh Nguyen,
  • Chuliang Fu,
  • Mouyang Cheng,
  • Buxuan Li,
  • Tyra E. Espedal,
  • Zhantao Chen,
  • Kuan Qiao,
  • Kumar Neeraj,
  • Abhijatmedhi Chotrattanapituk,
  • Denisse Cordova Carrizales,
  • Eunbi Rha,
  • Tongtong Liu,
  • Shivam N. Kajale,
  • Deblina Sarkar,
  • Donald A. Walko,
  • Haidan Wen,
  • Svetlana V. Boriskina,
  • Jeehwan Kim,
  • Mingda Li

摘要

Efficient thermal management is essential for the reliability of modern power electronics, where increasing device density leads to severe heat dissipation challenges. However, in thin-film systems, thermal transport is often compromised by interfacial resistance and microscale defects introduced during synthesis or transfer, which are difficult to characterize using conventional techniques. Here we present a non-contact, spatiotemporal-resolved ultrafast X-ray diffraction method to extract in-plane thermal conductivity and thermal boundary conductance, using GaN thin films on silicon as a model system. By tracking the pump-induced lattice strain, we reconstruct the lateral heat flow dynamics and quantitatively probe thermal transport near a wrinkle defect. We uncover pronounced asymmetric heat dissipation across the wrinkle, with a four-fold reduction in the local thermal conductivity near the wrinkle and a 25% drop in interfacial conductance. Our work demonstrates that ultrafast X-ray diffraction can serve as a precise thermal metrology tool for characterizing heat transport in multilayered thin-film structures for next-generation microelectronic devices.