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<p>Large-area high-quality dielectrics are essential for the integration of two-dimensional (2D) transistors. However, this integration remains challenging, especially for conventional dielectrics that require deposition processes. Adopting van der Waals (vdW) dielectrics is attractive. Molybdenum trioxide (α-MoO<sub>3</sub>) has been demonstrated as a vdW dielectric in 2D field-effect transistors (FETs), but previous demonstrations showed limited performance and small size. Here, we grow large-area single-crystalline MoO<sub>3</sub> with uniform thickness and explore its properties as a dielectric. Single-crystalline MoO<sub>3</sub> reaches the millimeter scale and maintains a high dielectric constant of ~ 18.5, low gate leakage of approximately 10<sup>−2</sup> A cm<sup>−2</sup> at 3.0 MV cm<sup>−1,</sup> and a large breakdown field of ~ 26.75 MV cm<sup>−1</sup>. Top-gated molybdenum disulfide (MoS<sub>2</sub>) transistors exhibit an average subthreshold swing of ~ 71 mV dec<sup>−1</sup>, and an on/off current ratio exceeding 10<sup>8</sup>. Furthermore, we demonstrate MoO<sub>3</sub>-based integrated circuits and low-power complementary metal-oxide-semiconductor (CMOS) inverters.</p>

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Large-area two-dimensional MoO3 as a high-κ dielectric for van der Waals integration

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月7日

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  • Zhenliang Hu,
  • Bei Zhao,
  • Qiang Fu,
  • Huiyan Guan,
  • Xiaozhi Liu,
  • Tong Yang,
  • Zijie Feng,
  • Xiaoya Liu,
  • Weiqiao Xia,
  • Xudong Sun,
  • Zucheng Zhang,
  • Yang Wang,
  • Yinzhu Chen,
  • Yutian Yang,
  • Shaopeng Feng,
  • Xiao Tang,
  • Yong Zhang,
  • Jiahao Chen,
  • Xinlei Zhang,
  • Taotao Li,
  • Zejun Li,
  • Yanpeng Liu,
  • Ming Yang,
  • Yue Luo,
  • Jing Wu,
  • Hongwei Liu,
  • Zhenhua Ni,
  • Yuan Liu,
  • Junpeng Lu

摘要

Large-area high-quality dielectrics are essential for the integration of two-dimensional (2D) transistors. However, this integration remains challenging, especially for conventional dielectrics that require deposition processes. Adopting van der Waals (vdW) dielectrics is attractive. Molybdenum trioxide (α-MoO3) has been demonstrated as a vdW dielectric in 2D field-effect transistors (FETs), but previous demonstrations showed limited performance and small size. Here, we grow large-area single-crystalline MoO3 with uniform thickness and explore its properties as a dielectric. Single-crystalline MoO3 reaches the millimeter scale and maintains a high dielectric constant of ~ 18.5, low gate leakage of approximately 10−2 A cm−2 at 3.0 MV cm−1, and a large breakdown field of ~ 26.75 MV cm−1. Top-gated molybdenum disulfide (MoS2) transistors exhibit an average subthreshold swing of ~ 71 mV dec−1, and an on/off current ratio exceeding 108. Furthermore, we demonstrate MoO3-based integrated circuits and low-power complementary metal-oxide-semiconductor (CMOS) inverters.