<p>Metasurfaces enable subwavelength control of free-space light for applications in sensing, nonlinear optics, and quantum photonics. However, their practical deployment is hindered by two key limitations: a tradeoff between low-<i>Q</i> resonances and weak amplitude contrast, and their predominantly static nature allowing only passive functionalities. These challenges are particularly severe in the mid-infrared (mid-IR), where the scarcity of low-loss materials constrains performance and scalability. Here, we demonstrate actively tunable single-crystalline silicon membrane metasurfaces combining high-<i>Q</i> resonances, strong amplitude contrast, and wafer-scale manufacturability. Our platform achieves record-high measured <i>Q</i>-factors up to 3000 in the mid-IR and supports two dynamic modulation schemes: electro-thermal tuning via Joule heating with &#xa0;&gt;50% modulation depth at CMOS-compatible voltages and speeds up to 14.5&#xa0;kHz, and ultrafast all-optical modulation via carrier generation in silicon with nanosecond response times and estimated sub-GHz rates. These results establish silicon membrane metasurfaces as a scalable platform for active mid-IR photonics.</p>

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Mid-IR light modulators enabled by dynamically tunable ultra-high-Q silicon membrane metasurfaces

  • Felix Ulrich Brikh,
  • Aleksei Ezerskii,
  • Olesia Pashina,
  • Nikita Glebov,
  • Wenhong Yang,
  • Wenping Yin,
  • Sergey V. Makarov,
  • Mihail Petrov,
  • Ivan Sinev,
  • Hatice Altug

摘要

Metasurfaces enable subwavelength control of free-space light for applications in sensing, nonlinear optics, and quantum photonics. However, their practical deployment is hindered by two key limitations: a tradeoff between low-Q resonances and weak amplitude contrast, and their predominantly static nature allowing only passive functionalities. These challenges are particularly severe in the mid-infrared (mid-IR), where the scarcity of low-loss materials constrains performance and scalability. Here, we demonstrate actively tunable single-crystalline silicon membrane metasurfaces combining high-Q resonances, strong amplitude contrast, and wafer-scale manufacturability. Our platform achieves record-high measured Q-factors up to 3000 in the mid-IR and supports two dynamic modulation schemes: electro-thermal tuning via Joule heating with  >50% modulation depth at CMOS-compatible voltages and speeds up to 14.5 kHz, and ultrafast all-optical modulation via carrier generation in silicon with nanosecond response times and estimated sub-GHz rates. These results establish silicon membrane metasurfaces as a scalable platform for active mid-IR photonics.