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<p>Efficient bulk photovoltaic (BPV) conversion and room-temperature ferromagnetism are difficult to combine, because the itinerant electrons that support magnetic order favor metallic transport, whereas BPV generation requires a semiconducting state with broken inversion symmetry. Here, we show that oxygen-plasma implantation transforms metallic Fe<sub>3</sub>GaTe<sub>2</sub> into a ferromagnetic semiconductor with a giant BPV response, enabling zero-bias photocurrent generation in a non-centrosymmetric lattice. Oxygen incorporation localizes itinerant Fe <i>d</i>-electrons, induces p-type semiconducting transport and polar electronic structure, while oxygen-associated exchange pathways allow persistent ferromagnetic state above room temperature. The resulting devices exhibit spontaneous broadband photoresponse, with short-circuit current densities approaching 30 A cm<sup>−2</sup> and a BPV coefficient up to 0.25 V<sup>−1</sup>. The photovoltaic current can be linearly programmed by low magnetic fields based on field-dependent magnetoresistive modulation. Using the experimentally calibrated device response, we demonstrate magnetically programmable feature separation and image restoration with 92.3% recognition accuracy, establishing oxygen-engineered Fe<sub>3</sub>GaTe<sub>2</sub> as a platform for self-powered, reconfigurable magnetic optoelectronics.</p>

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Giant bulk photovoltaic effect in an iron-based magnetic semiconductor

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月16日

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  • Mingliang Cheng,
  • Zheng Wang,
  • Jingyu Ji,
  • Jianzhao Wang,
  • Yiting Mo,
  • Yijun Huang,
  • Zhenhua Zhang,
  • Chenxi Lu,
  • Senjiang Yu,
  • Xinglong Dong,
  • Liang Hu,
  • Xuefeng Zhang

摘要

Efficient bulk photovoltaic (BPV) conversion and room-temperature ferromagnetism are difficult to combine, because the itinerant electrons that support magnetic order favor metallic transport, whereas BPV generation requires a semiconducting state with broken inversion symmetry. Here, we show that oxygen-plasma implantation transforms metallic Fe3GaTe2 into a ferromagnetic semiconductor with a giant BPV response, enabling zero-bias photocurrent generation in a non-centrosymmetric lattice. Oxygen incorporation localizes itinerant Fe d-electrons, induces p-type semiconducting transport and polar electronic structure, while oxygen-associated exchange pathways allow persistent ferromagnetic state above room temperature. The resulting devices exhibit spontaneous broadband photoresponse, with short-circuit current densities approaching 30 A cm−2 and a BPV coefficient up to 0.25 V−1. The photovoltaic current can be linearly programmed by low magnetic fields based on field-dependent magnetoresistive modulation. Using the experimentally calibrated device response, we demonstrate magnetically programmable feature separation and image restoration with 92.3% recognition accuracy, establishing oxygen-engineered Fe3GaTe2 as a platform for self-powered, reconfigurable magnetic optoelectronics.