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Flexural phonon instability defines intrinsic van der Waals elastic limits in the interlayer direction

  • Heyi Wang,
  • Miaojie Liu,
  • Jiayi Li,
  • Shizhe Feng,
  • Yuan Hou,
  • Man Kit Cheng,
  • Ke Cao,
  • Fanling Meng,
  • Juzheng Chen,
  • Zhiping Xu,
  • Yang Lu

摘要

Frenkel’s cohesive model predicts an ideal elastic strain limit of ~10% for strong solids, a bound upheld in conventional materials. We demonstrate that such consistency breaks down in van der Waals (vdW) solids, challenging established strength theories. In situ tensile tests, combined with first-principles calculations, reveal unexpected localized decohesion failure at only ~3% strain in graphite and ~2% in h-BN along the interlayer direction—well below defect-controlled limits—defining their intrinsic elastic limits. This localization phenomenon is absent in MoS2, GaSe, and 3D crystals. We identify flexural phonon instability as the trigger for a cascade of strain localization, creating periodic nanogaps to release elastic strain energy. This dynamic instability redefines the intrinsic elastic limits of vdW crystals and opens pathways to tailor their structural/transport properties via strain engineering.