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<p>The rapid growth of computing demand requires high-speed transmission with low power consumption. Micro-light-emitting diodes (micro-LEDs), offering high modulation bandwidth, low-power operation, and array integration, are promising transmitters for next-generation interconnects. Here, we show yellow and red InGaN micro-LEDs, optimized through superlattice strain engineering and a three-period quantum well design, which were transfer-printed onto diamond, with microlenses fabricated by two-photon lithography for coupling optimization. The 20&#xa0;µm yellow micro-LED achieved an electrical-to-optical bandwidth of 2850.4 MHz at 6.25 A/cm², while the 20&#xa0;µm red device reached 2593.4 MHz at 50 A/cm². With on–off keying (OOK) modulation through a 1 m fiber link, 20&#xa0;µm and 40&#xa0;µm yellow devices achieved 1.5 Gbps at 25 µA (6.25 A/cm²) and 50 µA (3.125 A/cm²), with energy efficiencies of 0.056 pJ/bit and 0.110 pJ/bit, respectively. This study demonstrates the potential of InGaN yellow and red micro-LEDs for energy-efficient high-speed optical interconnects.</p>

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Transfer-printed yellow and red InGaN micro-LEDs on diamond for ultra-low-power high-speed optical interconnects

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年6月17日

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  • Runze Lin,
  • Yu Zhang,
  • Yucheng Yang,
  • Shengyuan Dong,
  • Handan Xu,
  • Daqi Shen,
  • Cheng Gao,
  • Zehui Liang,
  • Junze Tong,
  • Erdan Gu,
  • Zhizhong Chen,
  • Bo Shen,
  • Pengfei Tian

摘要

The rapid growth of computing demand requires high-speed transmission with low power consumption. Micro-light-emitting diodes (micro-LEDs), offering high modulation bandwidth, low-power operation, and array integration, are promising transmitters for next-generation interconnects. Here, we show yellow and red InGaN micro-LEDs, optimized through superlattice strain engineering and a three-period quantum well design, which were transfer-printed onto diamond, with microlenses fabricated by two-photon lithography for coupling optimization. The 20 µm yellow micro-LED achieved an electrical-to-optical bandwidth of 2850.4 MHz at 6.25 A/cm², while the 20 µm red device reached 2593.4 MHz at 50 A/cm². With on–off keying (OOK) modulation through a 1 m fiber link, 20 µm and 40 µm yellow devices achieved 1.5 Gbps at 25 µA (6.25 A/cm²) and 50 µA (3.125 A/cm²), with energy efficiencies of 0.056 pJ/bit and 0.110 pJ/bit, respectively. This study demonstrates the potential of InGaN yellow and red micro-LEDs for energy-efficient high-speed optical interconnects.