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<p>Dual hole transport layers consisting of NiO<sub>x</sub> and self-assembled molecules are widely adopted in inverted perovskite solar cells, yet plagued by high impurity content, inefficient hole transport, low molecular coverage, weak interfacial binding, unstable buried interface and energy level mismatch. Herein, a low-temperature chemical precipitation strategy is developed to synthesize high-quality NiO<sub>x</sub> nanoparticles as hole transport layers. Compared with the room-temperature route, the low-temperature prepared NiO<sub>x</sub> films deliver an elevated Ni<sup>3+</sup>/Ni<sup>2+</sup> ratio, reduced impurities, higher electrical conductivity and hole mobility. Moreover, this strategy improves molecular coverage, alleviates energy level mismatch, accelerates hole extraction and strengthens buried interface stability. The optimized cells achieve a certified power conversion efficiency of 27.1%, and the 14 cm<sup>2</sup> minimodule reaches an efficiency of 23.18%. The devices retain 91.5% efficiency after 2100 h of continuous operation, and 91.4% efficiency after 2000 h of damp-heat aging.</p>

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High-quality NiOx nanoparticles synthesized via low temperature chemical precipitation method for high-performance inverted perovskite photovoltaics

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月29日

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  • Ziyuan Liu,
  • Dongmei He,
  • Zuolin Zhang,
  • Kun Zhang,
  • Ziyi Tang,
  • Shaokuan Gong,
  • Xilai He,
  • Xinxing Liu,
  • Xuxia Shai,
  • Yue Yu,
  • Jiajia Zhang,
  • Xihan Chen,
  • Xuanhua Li,
  • Yang Wang,
  • Cong Chen,
  • Jianhong Yi,
  • Jiangzhao Chen

摘要

Dual hole transport layers consisting of NiOx and self-assembled molecules are widely adopted in inverted perovskite solar cells, yet plagued by high impurity content, inefficient hole transport, low molecular coverage, weak interfacial binding, unstable buried interface and energy level mismatch. Herein, a low-temperature chemical precipitation strategy is developed to synthesize high-quality NiOx nanoparticles as hole transport layers. Compared with the room-temperature route, the low-temperature prepared NiOx films deliver an elevated Ni3+/Ni2+ ratio, reduced impurities, higher electrical conductivity and hole mobility. Moreover, this strategy improves molecular coverage, alleviates energy level mismatch, accelerates hole extraction and strengthens buried interface stability. The optimized cells achieve a certified power conversion efficiency of 27.1%, and the 14 cm2 minimodule reaches an efficiency of 23.18%. The devices retain 91.5% efficiency after 2100 h of continuous operation, and 91.4% efficiency after 2000 h of damp-heat aging.