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<p>Tin dioxide (SnO<sub>2</sub>) stands as a premier electron transport layer in n-i-p perovskite solar cells (PSCs), yet interfacial defect-induced carrier recombination and energy-level misalignment impede its commercialization. Herein, we engineer a multifunctional polymeric interlayer by introducing polymerizable dimethyldiallylammonium chloride (DADMAC) at the SnO<sub>2</sub>/perovskite interface. The densely cross-linked P-DADMAC network reinforces mechanical interlocking, enhancing interfacial adhesion and stress dissipation. Concurrently, chloride ions (Cl⁻) from P-DADMAC synergistically passivate defects at both the perovskite buried interface and SnO<sub>2</sub> surface, inducing a graded n<sup>+</sup>-type band bending. This energy-band engineering reduces the heterojunction energy-level offset by 0.24 eV, thereby facilitating efficient charge extraction and minimizing non-radiative losses. Consequently, n-i-p devices achieve a power conversion efficiency (PCE) of 26.34% with a fill factor (FF) of 85.84% (certified: 26.27%), while a 25 cm<sup>2</sup> module (active area: 14 cm<sup>2</sup>) attains 22.03% PCE (FF &gt; 80%). This work establishes a paradigm for interfacial multifunctionalization in high-performance photovoltaics.</p>

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Highly efficient and stable perovskite photovoltaics enabled by multifunctional crosslinked n+-type interlayer

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年5月9日

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  • Jiakang Zhang,
  • Wenjian Yan,
  • Cheng Peng,
  • Mingzhe Zhu,
  • Zhipeng Li,
  • Haokun Jiang,
  • He Sun,
  • Mengjiao Lan,
  • Mingjun Ma,
  • Weilin Wu,
  • Yuanyuan Liao,
  • Cui Yan,
  • Huaigang Su,
  • Zhongmin Zhou

摘要

Tin dioxide (SnO2) stands as a premier electron transport layer in n-i-p perovskite solar cells (PSCs), yet interfacial defect-induced carrier recombination and energy-level misalignment impede its commercialization. Herein, we engineer a multifunctional polymeric interlayer by introducing polymerizable dimethyldiallylammonium chloride (DADMAC) at the SnO2/perovskite interface. The densely cross-linked P-DADMAC network reinforces mechanical interlocking, enhancing interfacial adhesion and stress dissipation. Concurrently, chloride ions (Cl⁻) from P-DADMAC synergistically passivate defects at both the perovskite buried interface and SnO2 surface, inducing a graded n+-type band bending. This energy-band engineering reduces the heterojunction energy-level offset by 0.24 eV, thereby facilitating efficient charge extraction and minimizing non-radiative losses. Consequently, n-i-p devices achieve a power conversion efficiency (PCE) of 26.34% with a fill factor (FF) of 85.84% (certified: 26.27%), while a 25 cm2 module (active area: 14 cm2) attains 22.03% PCE (FF > 80%). This work establishes a paradigm for interfacial multifunctionalization in high-performance photovoltaics.