Scholarlink

<p>Sn-based perovskite light-emitting diodes have attracted considerable attention due to their environmentally friendly properties and potential for second near-infrared window emission. However, intrinsic self-p-doping and high hole mobility of Sn-based perovskites lead to excessive hole injection under high current densities, causing severe hole dissipation and hindering the achievement of high efficiency at high radiance. Here, we present a grain morphology modulation strategy to optimize electron-hole injection and recombination dynamics. By introducing a growth regulator, perovskite grain morphology remarkably transforms from low-lying dendritic structures to elongated island-like formations, which restricts hole over-injection and spatially confines the recombination zone deeper into perovskite bulk. Consequently, optimal devices achieve an external quantum efficiency of 10.7% and a high radiance of 173 W sr<sup>-1</sup> m<sup>-2</sup>, with NIR-II emission at 963 nm. Furthermore, the devices demonstrate low-efficiency roll-off, achieving an external quantum efficiency of 8.1% at a high radiance of 153.6 W sr<sup>-1</sup> m<sup>-2</sup>.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Elongated grain morphology for efficient and radiant NIR-II Sn-based perovskite light-emitting diodes

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年5月5日

查看全文
  • Xiang Guan,
  • Yuqing Li,
  • Yu Su,
  • Yuanyuan Meng,
  • Han Tong,
  • Yujie Luo,
  • Kebin Lin,
  • Hong Liu,
  • Yuanzhi Wang,
  • Yaqing Li,
  • Yan Zhang,
  • Qin Zhang,
  • Siwei Hao,
  • Xi Chen,
  • Shaopeng Zhang,
  • Jianxun Lu,
  • Fengxian Xie,
  • Zhanhua Wei

摘要

Sn-based perovskite light-emitting diodes have attracted considerable attention due to their environmentally friendly properties and potential for second near-infrared window emission. However, intrinsic self-p-doping and high hole mobility of Sn-based perovskites lead to excessive hole injection under high current densities, causing severe hole dissipation and hindering the achievement of high efficiency at high radiance. Here, we present a grain morphology modulation strategy to optimize electron-hole injection and recombination dynamics. By introducing a growth regulator, perovskite grain morphology remarkably transforms from low-lying dendritic structures to elongated island-like formations, which restricts hole over-injection and spatially confines the recombination zone deeper into perovskite bulk. Consequently, optimal devices achieve an external quantum efficiency of 10.7% and a high radiance of 173 W sr-1 m-2, with NIR-II emission at 963 nm. Furthermore, the devices demonstrate low-efficiency roll-off, achieving an external quantum efficiency of 8.1% at a high radiance of 153.6 W sr-1 m-2.