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<p>Two-dimensional (2D) indium selenide (In<sub>2</sub>Se<sub>3</sub>) has great potential for next-generation processing-in-memory applications owing to high intrinsic carrier mobility and strong ferroelectricity. However, the lack of wafer-scale, back-end-of-line (BEOL) compatible growth and inherent polarization-induced hysteresis limit their viability in logic circuits. Here, we report thermal evaporation of a non-ferroelectric <i>κ</i>-phase In<sub>2</sub>Se<sub>3</sub> film that forms uniformly over 4-inch wafer-scale at &lt;450 °C. Structural characterization confirms underexplored <i>κ</i>-phase formation with an indirect bandgap of 1.45 eV and n-type conduction. The unique atomic arrangement suppresses spontaneous polarization, eliminating hysteresis in field-effect transistors (FETs). The <i>κ</i>-In<sub>2</sub>Se<sub>3</sub> FETs exhibit enhancement-mode operation, high field-effect mobility of 39.3 cm<sup>2</sup> V⁻<sup>1</sup> s⁻<sup>1</sup>, and stable switching over 1000 cycles, enabled by reduced trap states and contact resistance. By integrating <i>κ</i>-In<sub>2</sub>Se<sub>3</sub> with a p-type selenium-alloyed tellurium oxide FET, we demonstrate a complementary inverter with full-swing operation and high voltage gain. These results establish <i>κ</i>-In<sub>2</sub>Se<sub>3</sub> as a scalable 2D semiconductor platform for BEOL-compatible logic integration.</p>

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Wafer-scale uniform non-ferroelectric κ-phase In2Se3 transistors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月30日

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  • Jaeyun Lee,
  • Yongwoo Lee,
  • Haksoon Jung,
  • Taoyu Zou,
  • Mingyu Kim,
  • Hyeonho Gu,
  • Hyeonjin Lee,
  • Tae Hyeon Park,
  • David ChangMo Yang,
  • Chang Woo Myung,
  • Ao Liu,
  • Jimin Kwon,
  • Yong-Young Noh

摘要

Two-dimensional (2D) indium selenide (In2Se3) has great potential for next-generation processing-in-memory applications owing to high intrinsic carrier mobility and strong ferroelectricity. However, the lack of wafer-scale, back-end-of-line (BEOL) compatible growth and inherent polarization-induced hysteresis limit their viability in logic circuits. Here, we report thermal evaporation of a non-ferroelectric κ-phase In2Se3 film that forms uniformly over 4-inch wafer-scale at <450 °C. Structural characterization confirms underexplored κ-phase formation with an indirect bandgap of 1.45 eV and n-type conduction. The unique atomic arrangement suppresses spontaneous polarization, eliminating hysteresis in field-effect transistors (FETs). The κ-In2Se3 FETs exhibit enhancement-mode operation, high field-effect mobility of 39.3 cm2 V⁻1 s⁻1, and stable switching over 1000 cycles, enabled by reduced trap states and contact resistance. By integrating κ-In2Se3 with a p-type selenium-alloyed tellurium oxide FET, we demonstrate a complementary inverter with full-swing operation and high voltage gain. These results establish κ-In2Se3 as a scalable 2D semiconductor platform for BEOL-compatible logic integration.