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<p>The poor performance of molecular transistors is a major bottleneck for developing ultra-miniaturized integrated circuits. To date, the absence of a design-led strategy to systematically enhance the performance of fundamental molecular circuit components, coupled with sub-optimal device fabrication yields, has posed significant barriers to the widespread adoption and practical implementation of nanoelectronics. In this study, we report high-performance molecular transistors with a vertical configuration that employs self-assembled monolayers as the channel material and a top graphene electrode that allows external electro-gating. Leveraging on distinct hopping and tunneling charge transport mechanisms to mediate the ON and OFF transistor states, we achieve robust device performance at working CPU temperatures up to 350 K, with ON/OFF ratios exceeding 10<sup>4</sup>. Produced in yields &gt;90%, these molecular transistors perform logic operations, support wafer-scale integration and provide a versatile platform for advancing the understanding of the mechanisms governing molecular charge transport.</p>

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High-performance microelectronic-integratable molecular transistors

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年4月29日

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  • Yu Xie,
  • Zhou Cao,
  • Ziming Zhou,
  • Enrique del Barco,
  • Wenkun Lv,
  • Shuangan Zang,
  • Ningyue Chen,
  • Jin-Liang Lin,
  • Pierre-André Cazade,
  • Damien Thompson,
  • Yuan Li

摘要

The poor performance of molecular transistors is a major bottleneck for developing ultra-miniaturized integrated circuits. To date, the absence of a design-led strategy to systematically enhance the performance of fundamental molecular circuit components, coupled with sub-optimal device fabrication yields, has posed significant barriers to the widespread adoption and practical implementation of nanoelectronics. In this study, we report high-performance molecular transistors with a vertical configuration that employs self-assembled monolayers as the channel material and a top graphene electrode that allows external electro-gating. Leveraging on distinct hopping and tunneling charge transport mechanisms to mediate the ON and OFF transistor states, we achieve robust device performance at working CPU temperatures up to 350 K, with ON/OFF ratios exceeding 104. Produced in yields >90%, these molecular transistors perform logic operations, support wafer-scale integration and provide a versatile platform for advancing the understanding of the mechanisms governing molecular charge transport.