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<p>HfO<sub>2</sub>-based ferroelectrics have emerged as promising candidates for next-generation information devices due to their excellent compatibility with complementary metal oxide semiconductor technology. However, achieving room-temperature multiferroicity in single-phase HfO<sub>2</sub>-based materials remains a rewarding yet challenging goal. Here, we report the discovery of room temperature multiferroicity in single-phase Cr-doped HfO<sub>2</sub> films. We demonstrate a direct correlation between ferroelectric and ferromagnetic orders; films with stronger ferromagnetism exhibit enhanced ferroelectricity. Crucially, the application of external magnetic fields induces a significant boost in both ferroelectric polarization and piezoresponse amplitude. A giant magnetoelectric coupling coefficient of ~100 Vcm<sup>-1</sup>Oe<sup>-1</sup> is obtained, surpassing those of most previously reported single-phase multiferroic materials at room temperature. Our results not only establish Cr-doped HfO<sub>2</sub> films as a promising platform for exploring emergent multiferroic phenomena but also pave the way for a new class of silicon-compatible magnetoelectric devices.</p>

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Observation of room-temperature multiferroicity with strong magnetoelectric coupling in hafnia thin films

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月27日

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  • Haiyi Zhang,
  • Haifeng Bu,
  • Dehe Zhang,
  • Yuchen Tu,
  • Yaoxin Li,
  • Zhijian Shen,
  • Weijin Pan,
  • Zeyu Guan,
  • Qinghua Zhang,
  • Kai Chen,
  • Yurong Yang,
  • Shengchun Shen,
  • Yuewei Yin,
  • Xiaoguang Li

摘要

HfO2-based ferroelectrics have emerged as promising candidates for next-generation information devices due to their excellent compatibility with complementary metal oxide semiconductor technology. However, achieving room-temperature multiferroicity in single-phase HfO2-based materials remains a rewarding yet challenging goal. Here, we report the discovery of room temperature multiferroicity in single-phase Cr-doped HfO2 films. We demonstrate a direct correlation between ferroelectric and ferromagnetic orders; films with stronger ferromagnetism exhibit enhanced ferroelectricity. Crucially, the application of external magnetic fields induces a significant boost in both ferroelectric polarization and piezoresponse amplitude. A giant magnetoelectric coupling coefficient of ~100 Vcm-1Oe-1 is obtained, surpassing those of most previously reported single-phase multiferroic materials at room temperature. Our results not only establish Cr-doped HfO2 films as a promising platform for exploring emergent multiferroic phenomena but also pave the way for a new class of silicon-compatible magnetoelectric devices.