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<p>Ternary chalcogenide AgBiS<sub>2</sub> nanocrystals have emerged as an environmentally friendly and stable material for ultra-thin film lightweight low-cost solar cells. However, their development is currently limited by the poor charge transport characteristics, mainly due to low carrier mobility and the prevalence of surface defects. This leads to a short carrier diffusion length, which severely restricts the thickness of the photoactive layer and the absorption of near-infrared photons. Here, we demonstrate ligand-mediated heteroepitaxial growth of a molecular lead halide perovskite layer bridges along the (100) facet of AgBiS<sub>2</sub> nanocrystals, facilitating both efficient surface passivation and charge transport. The bridged nanocrystals enable the annealing process at elevated temperatures without inducing defect formation. This results in a greater cationic disorder, fully activating their light-absorption capability. The synergistic effect of structural modulation and cation disorder engineering addresses the long-standing trade-off between charge extraction and light absorption of AgBiS<sub>2</sub> nanocrystal solar cells, enabling thick-film fabrication to compensate for losses in infrared absorption. Consequently, the resultant solar cells with a 185 nm-thick AgBiS<sub>2</sub> nanocrystal layer achieve a certified power conversion efficiency of 11.22% and a short-circuit current of ~ 34 mA cm<sup>-2</sup> under AM 1.5 G illumination (aperture area: 0.022 cm<sup>2</sup>), representing a record-high performance.</p>

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Molecular lead halide perovskite layer bridged AgBiS2 nanocrystals for efficient thin film solar cells

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月24日

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  • Wanpeng Yang,
  • Tianyu Sun,
  • Haixuan Yu,
  • Haodan Shi,
  • Yong Hu,
  • Junyi Huang,
  • Zhirong Liu,
  • Ying Xu,
  • Lei Wang,
  • Bing Hu,
  • Yan Shen,
  • Mohammad Khaja Nazeeruddin,
  • Mingkui Wang

摘要

Ternary chalcogenide AgBiS2 nanocrystals have emerged as an environmentally friendly and stable material for ultra-thin film lightweight low-cost solar cells. However, their development is currently limited by the poor charge transport characteristics, mainly due to low carrier mobility and the prevalence of surface defects. This leads to a short carrier diffusion length, which severely restricts the thickness of the photoactive layer and the absorption of near-infrared photons. Here, we demonstrate ligand-mediated heteroepitaxial growth of a molecular lead halide perovskite layer bridges along the (100) facet of AgBiS2 nanocrystals, facilitating both efficient surface passivation and charge transport. The bridged nanocrystals enable the annealing process at elevated temperatures without inducing defect formation. This results in a greater cationic disorder, fully activating their light-absorption capability. The synergistic effect of structural modulation and cation disorder engineering addresses the long-standing trade-off between charge extraction and light absorption of AgBiS2 nanocrystal solar cells, enabling thick-film fabrication to compensate for losses in infrared absorption. Consequently, the resultant solar cells with a 185 nm-thick AgBiS2 nanocrystal layer achieve a certified power conversion efficiency of 11.22% and a short-circuit current of ~ 34 mA cm-2 under AM 1.5 G illumination (aperture area: 0.022 cm2), representing a record-high performance.