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<p>In-memory computing using two-terminal memristors offers a promising route to reduce the energy demands of data-intensive computing. However, current devices scale poorly due to sneak currents and materials that are incompatible with standard complementary metal-oxide-semiconductor and very large-scale integration processes. Here we demonstrate a self-rectifying memristor that unifies resistive switching and diode-like rectification in a single device, a hybrid ferroelectric-ionic tunnel diode fabricated using complementary metal-oxide-semiconductor compatible materials and processes. We harness the collective (ferroelectric-antiferroelectric polymorphism) and defective (ionic) switching behaviors of HfO<sub>2</sub>&#xa0;−&#xa0;ZrO<sub>2</sub> to synergistically enhance both its electroresistance and rectifying behavior. Furthermore, conformal atomic layer deposition enables the integration of three-dimensional device structures, yielding high on/off (9.3&#xa0;×&#xa0;10<sup>7</sup>) and rectifying (1.7&#xa0;×&#xa0;10<sup>6</sup>) ratios with a storage capacity of 10 Gb. These results highlight the potential of this device as a hardware building block for scalable in-memory computing platforms.</p>

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Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年5月21日

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  • Jeong-Han Kim,
  • Wonjun Shin,
  • Ryun-Han Koo,
  • Jangsaeng Kim,
  • Eugene Park,
  • Piush Behera,
  • Sojin Kim,
  • Jinseok Hong,
  • Feras Al-Dirini,
  • Been Kwak,
  • Jiwon You,
  • Jiseong Im,
  • Dooyong Koh,
  • Yejin Hong,
  • Qinyuan Xue,
  • Hyun-Min Kim,
  • Hyunho Seok,
  • Youngchan Cho,
  • Hwiin Ju,
  • Wooje Jung,
  • Kyunghwan Lee,
  • Daewon Ha,
  • Jong-Ho Lee,
  • Seung-Yong Lee,
  • Deok-Hwang Kwon,
  • Frances M. Ross,
  • Youngho Kang,
  • Suraj S. Cheema,
  • Daewoong Kwon

摘要

In-memory computing using two-terminal memristors offers a promising route to reduce the energy demands of data-intensive computing. However, current devices scale poorly due to sneak currents and materials that are incompatible with standard complementary metal-oxide-semiconductor and very large-scale integration processes. Here we demonstrate a self-rectifying memristor that unifies resistive switching and diode-like rectification in a single device, a hybrid ferroelectric-ionic tunnel diode fabricated using complementary metal-oxide-semiconductor compatible materials and processes. We harness the collective (ferroelectric-antiferroelectric polymorphism) and defective (ionic) switching behaviors of HfO2 − ZrO2 to synergistically enhance both its electroresistance and rectifying behavior. Furthermore, conformal atomic layer deposition enables the integration of three-dimensional device structures, yielding high on/off (9.3 × 107) and rectifying (1.7 × 106) ratios with a storage capacity of 10 Gb. These results highlight the potential of this device as a hardware building block for scalable in-memory computing platforms.