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<p>Realising ubiquitous environmental monitoring and smart sensing devices compatible with Internet of Things (IoT) and 6 G networks requires transistors with terahertz (THz) cutoff frequencies (<i>f</i><sub>T</sub>) for efficient signal processing. However, the carrier transit time intrinsically limits conventional devices. Vertical two-dimensional (2D) base transistors offer a way to exceed this limit, yet interface losses typically suppress current gain, degrade high-frequency performance, and hinder THz operation. Here, we report a silicon–graphene–germanium barristor that overcomes these obstacles. Wafer-scale single-crystal graphene was epitaxially grown on germanium and integrated with silicon membranes, forming asymmetric Schottky barriers at the graphene–silicon and graphene–germanium interfaces. Using graphene’s quantum capacitance, the asymmetric barriers enable distinct hot-carrier emission at both terminals and greatly increase the current gain, while graphene’s atomic thickness minimises the perpendicular transit time. As a result, the device achieves a current gain up to 1.8 × 10<sup>7</sup> and an intrinsic <i>f</i><sub>T</sub> up to 132 GHz, with modelling and simulation indicating scalability into the THz regime. These findings establish a promising high-frequency transistor paradigm for IoT sensors and systems.</p>

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A high-frequency silicon-graphene-germanium barristor

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年4月8日

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  • Xiaoyue Wang,
  • Shaotang Sun,
  • Zishen Qiao,
  • Haiyan Jiang,
  • Changze Li,
  • Haitao Jiang,
  • Jing Bai,
  • Xubo Song,
  • Xufan Li,
  • Xinzhe Wang,
  • Xi Zhu,
  • Shun Feng,
  • Bo Li,
  • Jinhua Liang,
  • Lingfei Wang,
  • Zhongying Xue,
  • Yutaka Ohno,
  • Jianjun Gao,
  • Zengfeng Di,
  • Dongming Sun,
  • Chi Liu

摘要

Realising ubiquitous environmental monitoring and smart sensing devices compatible with Internet of Things (IoT) and 6 G networks requires transistors with terahertz (THz) cutoff frequencies (fT) for efficient signal processing. However, the carrier transit time intrinsically limits conventional devices. Vertical two-dimensional (2D) base transistors offer a way to exceed this limit, yet interface losses typically suppress current gain, degrade high-frequency performance, and hinder THz operation. Here, we report a silicon–graphene–germanium barristor that overcomes these obstacles. Wafer-scale single-crystal graphene was epitaxially grown on germanium and integrated with silicon membranes, forming asymmetric Schottky barriers at the graphene–silicon and graphene–germanium interfaces. Using graphene’s quantum capacitance, the asymmetric barriers enable distinct hot-carrier emission at both terminals and greatly increase the current gain, while graphene’s atomic thickness minimises the perpendicular transit time. As a result, the device achieves a current gain up to 1.8 × 107 and an intrinsic fT up to 132 GHz, with modelling and simulation indicating scalability into the THz regime. These findings establish a promising high-frequency transistor paradigm for IoT sensors and systems.