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<p>Textile electronics with digital capabilities could sense, process, and store data, while providing immersive interaction with user and their immediate surroundings. However, existing textile electronic systems are typically built on von Neumann architecture and rigid chips, limiting their seamless integration with clothing. Here, we propose a single-fibre logic/memory electronic device based on interface passivation-corrosion whose functions do not depend on traditional carrier heterojunction interfaces. The same fibre can be switched to operate as either a diode or a memristor. The diode mode remains stable under higher voltages and longer cycling periods than the state-of-the-art anion–cation heterojunction fibres. The fibre electronics are highly stretchable (up to 50%), and are compatible with industry-standard weaving techniques. We also demonstrate the application of these fibres in “AND” and “OR” logic gates, neuromorphic synapses, and textile memristor arrays. Regulated passivation-corrosion-enabled logic and memory in fibres offers a promising avenue for the next-generation textile computing.</p>

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In-fibre logic and memory via tuneable passivation–corrosion

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月31日

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  • Yuanlong Li,
  • Weifeng Yang,
  • Alexander V. Shokurov,
  • Manuel Reis Carneiro,
  • Carlo Menon

摘要

Textile electronics with digital capabilities could sense, process, and store data, while providing immersive interaction with user and their immediate surroundings. However, existing textile electronic systems are typically built on von Neumann architecture and rigid chips, limiting their seamless integration with clothing. Here, we propose a single-fibre logic/memory electronic device based on interface passivation-corrosion whose functions do not depend on traditional carrier heterojunction interfaces. The same fibre can be switched to operate as either a diode or a memristor. The diode mode remains stable under higher voltages and longer cycling periods than the state-of-the-art anion–cation heterojunction fibres. The fibre electronics are highly stretchable (up to 50%), and are compatible with industry-standard weaving techniques. We also demonstrate the application of these fibres in “AND” and “OR” logic gates, neuromorphic synapses, and textile memristor arrays. Regulated passivation-corrosion-enabled logic and memory in fibres offers a promising avenue for the next-generation textile computing.