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<p>The advancement of flexible electronics necessitates displays that combine bendability, high resolution, and energy efficiency. Nevertheless, conventional pixel architectures impose critical limitations in power consumption and scaling, hindering the development of such displays. Here, we demonstrate a flexible active-matrix micro light-emitting diode display using a ferroelectric metal field-effect transistor with hafnium-based gate stack and an indium tin oxide channel, functioning as driver and memory element, fabricated below 400 °C on polyimide. The 400°C-activated ferroelectric capacitors in transistors exhibit a remnant polarization of 47 μC/cm<sup>2</sup>. The resulting devices achieve a record normalized memory window of 0.63 V/nm (7.5 V), an on/off ratio of 4 × 10<sup>8</sup>, and robust flexibility, retaining performance after 10<sup>5</sup> bending cycles at a radius of 4 mm. The proposed pixel circuit supports dual-mode driving schemes, enabling precise grayscale control at a 200 kHz refresh rate. This pixel architecture achieves a high resolution of 428 pixels per inch and dynamic power consumption of 0.68 nW, highlighting its potential for next-generation wearable and portable displays.</p>

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Flexible active-matrix micro-LED display with 1T-1FeMFET architecture featuring scaling-limit-free design

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年3月31日

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  • Tingrui Huang,
  • Guangan Yang,
  • Yimeng Sang,
  • Fulin Zhuo,
  • Mingming Liu,
  • Gengyu Li,
  • Heng Cheng,
  • Zuoxu Yu,
  • Zhiyuan Fu,
  • Siyang Liu,
  • Haoliang Shen,
  • Zhihao Yu,
  • Bin Liu,
  • Xinran Wang,
  • Wangran Wu,
  • Runxiao Shi,
  • Zhe Zhuang,
  • Weifeng Sun

摘要

The advancement of flexible electronics necessitates displays that combine bendability, high resolution, and energy efficiency. Nevertheless, conventional pixel architectures impose critical limitations in power consumption and scaling, hindering the development of such displays. Here, we demonstrate a flexible active-matrix micro light-emitting diode display using a ferroelectric metal field-effect transistor with hafnium-based gate stack and an indium tin oxide channel, functioning as driver and memory element, fabricated below 400 °C on polyimide. The 400°C-activated ferroelectric capacitors in transistors exhibit a remnant polarization of 47 μC/cm2. The resulting devices achieve a record normalized memory window of 0.63 V/nm (7.5 V), an on/off ratio of 4 × 108, and robust flexibility, retaining performance after 105 bending cycles at a radius of 4 mm. The proposed pixel circuit supports dual-mode driving schemes, enabling precise grayscale control at a 200 kHz refresh rate. This pixel architecture achieves a high resolution of 428 pixels per inch and dynamic power consumption of 0.68 nW, highlighting its potential for next-generation wearable and portable displays.