Scholarlink

<p>Two-dimensional (2D) semiconductors hold promise for next-generation electronics, yet the lack of scalable p-type counterparts remains a major bottleneck, with prior studies largely limited to discrete devices or simple circuits. Here we report the realization of medium-scale integrated circuits (MSICs) based on wafer-scale p-type 2D semiconductors, enabled by the controlled synthesis of uniform 4-inch 2H-MoTe<sub>2</sub> films. A precursor-engineering strategy that integrates thickness-tunable Mo precursors with a sustained-release chalcogen supply enables deterministic thickness control and wafer-scale uniformity. The resulting p-type transistors exhibit highly reproducible characteristics, including on/off ratios of ~10<sup>5</sup> and mobilities of ~7 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>under low operating voltages. Leveraging a device density exceeding 1300 cm<sup>−2</sup>, we demonstrate a 140-transistor full adder, showing the potential of our approach towards the realization of future large-scale 2D complementary metal-oxide-semiconductor (CMOS) circuits.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Medium-scale integrated circuits based on p-type 2D semiconducting MoTe2

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年3月23日

查看全文
  • Hui Wang,
  • Zebang Luo,
  • Biyuan Zheng,
  • Zilan Tang,
  • Huaidong Ye,
  • Yulong Yuan,
  • Yizhe Wang,
  • Haitao Zhang,
  • Qin Shuai,
  • Huawei Liu,
  • Guangcheng Wu,
  • Dong Li,
  • Li Xiang,
  • Anlian Pan

摘要

Two-dimensional (2D) semiconductors hold promise for next-generation electronics, yet the lack of scalable p-type counterparts remains a major bottleneck, with prior studies largely limited to discrete devices or simple circuits. Here we report the realization of medium-scale integrated circuits (MSICs) based on wafer-scale p-type 2D semiconductors, enabled by the controlled synthesis of uniform 4-inch 2H-MoTe2 films. A precursor-engineering strategy that integrates thickness-tunable Mo precursors with a sustained-release chalcogen supply enables deterministic thickness control and wafer-scale uniformity. The resulting p-type transistors exhibit highly reproducible characteristics, including on/off ratios of ~105 and mobilities of ~7 cm2 V−1 s−1under low operating voltages. Leveraging a device density exceeding 1300 cm−2, we demonstrate a 140-transistor full adder, showing the potential of our approach towards the realization of future large-scale 2D complementary metal-oxide-semiconductor (CMOS) circuits.