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<p>Random migration of oxygen vacancies (V<sub>O</sub>) leads to unpredictable formation and rupture of conductive filaments (CFs) in oxide-based memristors. In this work, an atomically flat 4.5 nm hafnium oxide (HfO<sub>x</sub>) switching layer and a 3.5 nm elemental oxygen reservoir (EOR) layer are confined between two-dimensional HfS<sub>2</sub> and MoS<sub>2</sub> layers, ensuring a homogeneous electric field distribution. The migration and redistribution of V<sub>O</sub> within the ultrathin HfO<sub>x</sub> switching layer enable the memristive behavior of the device. The EOR-based memristors achieve high set/reset transition speeds of 8 ns and 15 ns, respectively. The electroneutral EOR layer interacts with V<sub>O</sub> in the HfO<sub>x</sub> switching layer and, together with the HfO<sub>x</sub> tunnel layer above the HfS<sub>2</sub>, forms a barrier to suppress the high-resistance state current. Reliable endurance up to 10<sup>5</sup> cycles, and long retention up to 10<sup>5 </sup>s are simultaneously obtained. Finally, a high recognition accuracy of 97.0% is achieved, demonstrating potential for low-power neuromorphic computing applications.</p>

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High-speed energy-efficient memristor confined in sub-5 nm space with elemental oxygen reservoir layer

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月18日

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  • Chenfei Li,
  • Wencheng Niu,
  • Da Wan,
  • Lin Tang,
  • Zhengdao Xie,
  • Kai Zhang,
  • Yuan Liu,
  • Qi Liu,
  • Lei Liao,
  • Xuming Zou,
  • Xingqiang Liu

摘要

Random migration of oxygen vacancies (VO) leads to unpredictable formation and rupture of conductive filaments (CFs) in oxide-based memristors. In this work, an atomically flat 4.5 nm hafnium oxide (HfOx) switching layer and a 3.5 nm elemental oxygen reservoir (EOR) layer are confined between two-dimensional HfS2 and MoS2 layers, ensuring a homogeneous electric field distribution. The migration and redistribution of VO within the ultrathin HfOx switching layer enable the memristive behavior of the device. The EOR-based memristors achieve high set/reset transition speeds of 8 ns and 15 ns, respectively. The electroneutral EOR layer interacts with VO in the HfOx switching layer and, together with the HfOx tunnel layer above the HfS2, forms a barrier to suppress the high-resistance state current. Reliable endurance up to 105 cycles, and long retention up to 105 s are simultaneously obtained. Finally, a high recognition accuracy of 97.0% is achieved, demonstrating potential for low-power neuromorphic computing applications.