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<p>Further transistor scaling requires gate dielectric materials with both high dielectric constant and wide bandgap to improve gate control and suppress leakage current. However, these two properties typically exhibit an inverse relationship, making it challenging to simultaneously optimize both. Here, we report the exfoliation of KBe<sub>2</sub>BO<sub>3</sub>F<sub>2</sub> (KBBF) dielectric nanosheets that overcome this trade-off. The material possesses a wide band gap exceeding 8 eV and a bulk dielectric constant of 63. Such dielectric properties give rise to a low leakage current of 10<sup>−6</sup> A cm<sup>−2</sup> at an equivalent oxide thickness of 0.62 nm and a high gate voltage of 15 V, and is predicted to work stably for 10 years at 6.6 V. 2D MoS<sub>2</sub> transistors gated by KBBF show a subthreshold swing of 60 mV dec<sup>−1</sup>, reaching the theoretical limit at room temperature, and an on/off ratio up to 10<sup>9</sup>. Moreover, the good electrostatic controllability of KBBF enables the fabrication of short-channel devices and inverter circuits. Our research broadens the scope of dielectrics and provides promising opportunities for the development of low-power 2D electronics and integrated circuits.</p>

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High-κ KBe2BO3F2 dielectric material with wide bandgap for two-dimensional electronics

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月23日

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  • Yongshan Xu,
  • Kailang Liu,
  • Guang Peng,
  • Teng Liu,
  • Li Sun,
  • Xiong Xiong,
  • Yanqing Wu,
  • Huacong Sun,
  • Xuedong Bai,
  • Yongcheng Zhu,
  • Zewen Xiao,
  • Huiqiao Li,
  • Tianyou Zhai

摘要

Further transistor scaling requires gate dielectric materials with both high dielectric constant and wide bandgap to improve gate control and suppress leakage current. However, these two properties typically exhibit an inverse relationship, making it challenging to simultaneously optimize both. Here, we report the exfoliation of KBe2BO3F2 (KBBF) dielectric nanosheets that overcome this trade-off. The material possesses a wide band gap exceeding 8 eV and a bulk dielectric constant of 63. Such dielectric properties give rise to a low leakage current of 10−6 A cm−2 at an equivalent oxide thickness of 0.62 nm and a high gate voltage of 15 V, and is predicted to work stably for 10 years at 6.6 V. 2D MoS2 transistors gated by KBBF show a subthreshold swing of 60 mV dec−1, reaching the theoretical limit at room temperature, and an on/off ratio up to 109. Moreover, the good electrostatic controllability of KBBF enables the fabrication of short-channel devices and inverter circuits. Our research broadens the scope of dielectrics and provides promising opportunities for the development of low-power 2D electronics and integrated circuits.