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<p>The tunnel oxide passivated contact (TOPCon) solar cell is poised to dominate silicon photovoltaics, yet the atomic-scale nature of pinholes—local disruptions in the SiO<sub>x</sub> layer enabling direct conduction—remains unresolved despite its critical importance for device performance. Here, using spherical aberration-corrected transmission electron microscopy, the TOPCon interface is uncovered at the atomic level, revealing two distinct pinhole types: recombinational pinholes with oxygen-depleted Si–Si contacts, and previously unknown passivating pinholes that retain sufficient oxygen to passivate dangling bonds while enabling carrier tunneling. These passivating pinholes exhibit cross-sectional sizes of approximately 1.6 ± 0.2 nm × 1.4 ± 0.3 nm and an area density of 2×10<sup>12</sup> cm<sup>-2</sup>. Fischer model analysis demonstrates that pinhole passivation, not geometry, governs device performance. Translating these insights, industrial large-area (333.3 cm<sup>2</sup>) TOPCon solar cells achieve certified efficiencies of 25.40% and open-circuit voltages of 738.7 mV. Our findings provide atomic-level insights into the TOPCon interface and offer direct guidance for fabricating high-efficiency solar cells.</p>

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Passivating pinholes for large-area and high-efficiency silicon solar cells with tunnel oxide passivated contact

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月14日

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  • Wenqian Zhang,
  • Kangping Zhang,
  • Yuhua Bai,
  • Yuanyuan Zhang,
  • Kuan Yang,
  • Bingbing Chen,
  • Xueliang Yang,
  • Jiadong Li,
  • Yanan Sun,
  • Yan Wu,
  • lingzhi Li,
  • Xuning Zhang,
  • Qing Gao,
  • Yuke Ren,
  • Jing Guo,
  • Lu Zhang,
  • Dehua Yang,
  • Jingwei Chen,
  • Xuan Chang,
  • Yanxin Liu,
  • Xingyuan San,
  • Dengyuan Song,
  • Jianhui Chen

摘要

The tunnel oxide passivated contact (TOPCon) solar cell is poised to dominate silicon photovoltaics, yet the atomic-scale nature of pinholes—local disruptions in the SiOx layer enabling direct conduction—remains unresolved despite its critical importance for device performance. Here, using spherical aberration-corrected transmission electron microscopy, the TOPCon interface is uncovered at the atomic level, revealing two distinct pinhole types: recombinational pinholes with oxygen-depleted Si–Si contacts, and previously unknown passivating pinholes that retain sufficient oxygen to passivate dangling bonds while enabling carrier tunneling. These passivating pinholes exhibit cross-sectional sizes of approximately 1.6 ± 0.2 nm × 1.4 ± 0.3 nm and an area density of 2×1012 cm-2. Fischer model analysis demonstrates that pinhole passivation, not geometry, governs device performance. Translating these insights, industrial large-area (333.3 cm2) TOPCon solar cells achieve certified efficiencies of 25.40% and open-circuit voltages of 738.7 mV. Our findings provide atomic-level insights into the TOPCon interface and offer direct guidance for fabricating high-efficiency solar cells.