Scholarlink

<p>Achieving high-quality source/drain contacts in two-dimensional (2D) semiconductors remains challenging due to Fermi-level pinning induced by metal-induced gap states (MIGS). Here, we demonstrate an atomically sharp Hf<sub>2</sub>C/HfSe<sub>2</sub> edge contact formed via a laterally directed chemical conversion, driven by catalyst-assisted hydrodeselenization and carbonization under epitaxial alignment. Classical and ab initio molecular dynamics elucidate the atomistic mechanism of heteroepitaxial interface formation. Scanning tunneling microscopy and spectroscopy measurements confirm suppressed MIGS at the heteroepitaxial interface, indicating an electronically transparent junction. Electrical measurements reveal a near-zero Schottky barrier height ( ≈ 5 meV) and reduced contact resistance ( ≈ 475 Ω·μm) when compared with previously reported 2D edge-contact systems. When co-integrated with a van der Waals-integrated native high-κ HfO<sub>2</sub> gate dielectric within a single HfSe<sub>2</sub> channel, the devices exhibit a subthreshold swing of 62 mV/dec and on-state current density of 920 μA/μm. This integrated platform establishes a scalable design framework that couples contact and gate-stack engineering for next-generation 2D logic technologies.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Atomically sharp heteroepitaxial Hf2C edge contacts enabling barrier-free carrier injection in 2D HfSe2 semiconducting channels

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年3月10日

查看全文
  • Gihyeon Bhin,
  • Taeho Kang,
  • Jeong Won Jin,
  • Sangmin Ji,
  • Seung Yong Lee,
  • Chang Yong Park,
  • Ji Hwan Lee,
  • Saeroonter Oh,
  • Ji-Sang Park,
  • Young Jae Song,
  • Sungjoo Lee

摘要

Achieving high-quality source/drain contacts in two-dimensional (2D) semiconductors remains challenging due to Fermi-level pinning induced by metal-induced gap states (MIGS). Here, we demonstrate an atomically sharp Hf2C/HfSe2 edge contact formed via a laterally directed chemical conversion, driven by catalyst-assisted hydrodeselenization and carbonization under epitaxial alignment. Classical and ab initio molecular dynamics elucidate the atomistic mechanism of heteroepitaxial interface formation. Scanning tunneling microscopy and spectroscopy measurements confirm suppressed MIGS at the heteroepitaxial interface, indicating an electronically transparent junction. Electrical measurements reveal a near-zero Schottky barrier height ( ≈ 5 meV) and reduced contact resistance ( ≈ 475 Ω·μm) when compared with previously reported 2D edge-contact systems. When co-integrated with a van der Waals-integrated native high-κ HfO2 gate dielectric within a single HfSe2 channel, the devices exhibit a subthreshold swing of 62 mV/dec and on-state current density of 920 μA/μm. This integrated platform establishes a scalable design framework that couples contact and gate-stack engineering for next-generation 2D logic technologies.