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<p>Erbium (Er) is an attractive gain medium for amplifiers and lasers due to its long excited-state lifetime, low noise and nonlinearity, and temperature stability. Recently developed&#xa0;ultra-low-loss Si<sub>3</sub>N<sub>4</sub> photonic integrated circuits combined with Er ion implantation have enabled high-performance on-chip Er lasers, but manufacturing&#xa0;scalability has been limited by the high&#xa0;2 MeV implantation required for tightly confined 700-nm-thick waveguides. Here we demonstrate the first fully wafer-scale, foundry-compatible Er-doped Si<sub>3</sub>N<sub>4</sub> tunable lasers by using 200-nm-thick waveguides, reducing implantation energy to below 500 keV and enabling usage of&#xa0;300-mm industrial implanters. The low-confinement design also improves laser performance and output power. We achieve 91 nm tuning across the C- and L-bands, 47.6 mW fiber-coupled output power, and a 78.5 Hz intrinsic linewidth. Devices operate up to 125<sup>∘</sup>C and show less than 15 MHz drift over 6 hours, enabling scalable &#xa0;high-performance&#xa0;Er-doped lasers for integrated photonics.</p>

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Wafer-scale manufacturing of ultra-broadband, high-power erbium-doped integrated lasers

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年3月10日

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  • Xinru Ji,
  • Xuan Yang,
  • Yang Liu,
  • Zheru Qiu,
  • Grigory Lihachev,
  • Simone Bianconi,
  • Jiale Sun,
  • Andrey Voloshin,
  • Taegon Kim,
  • Joseph C. Olson,
  • Tobias J. Kippenberg

摘要

Erbium (Er) is an attractive gain medium for amplifiers and lasers due to its long excited-state lifetime, low noise and nonlinearity, and temperature stability. Recently developed ultra-low-loss Si3N4 photonic integrated circuits combined with Er ion implantation have enabled high-performance on-chip Er lasers, but manufacturing scalability has been limited by the high 2 MeV implantation required for tightly confined 700-nm-thick waveguides. Here we demonstrate the first fully wafer-scale, foundry-compatible Er-doped Si3N4 tunable lasers by using 200-nm-thick waveguides, reducing implantation energy to below 500 keV and enabling usage of 300-mm industrial implanters. The low-confinement design also improves laser performance and output power. We achieve 91 nm tuning across the C- and L-bands, 47.6 mW fiber-coupled output power, and a 78.5 Hz intrinsic linewidth. Devices operate up to 125∘C and show less than 15 MHz drift over 6 hours, enabling scalable  high-performance Er-doped lasers for integrated photonics.