Scholarlink

<p>The intrinsic phase instability of CsPbI<sub>3</sub> perovskites necessitates stringent fabrication conditions, significantly hindering the practical deployment. In the DMA-mediated CsPbI<sub>3</sub> nucleation system, the Cs<sup>+</sup>/DMA<sup>+</sup> ion exchange critically governs the resulting film quality. Here, we employ a moisture-responsive crystallization strategy utilizing propyltriethoxysilane (PTES) to deposite CsPbI<sub>3</sub> under ambient air with high humidity (55%). We demonstrate that the siloxane groups can capture DMA<sup>+</sup> in the intermediate DMAPbI<sub>3</sub>, facilitating DMA<sup>+</sup> extraction and Cs<sup>+</sup> incorporation, thereby accelerating crystallization kinetics. This approach enables CsPbI<sub>3</sub> PSCs to achieve a power conversion efficiency (PCE) of 21.00% with an impressive fill factor (FF) of 86.1% while processing perovskite under relative humidity (RH) of 55%. Higher PCEs of 21.85% and 22.60% (certified 22.02%) were achieved for devices fabricated at a lower RH of 25% and for films spin-coated under an N<sub>2</sub> atmosphere followed by annealing in ambient air, respectively. Furthermore, PTES-treated devices exhibit excellent operational stability under ambient conditions.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Moisture-responsive crystallization strategy for efficient CsPbI3 solar cells fabricated under high-humidity conditions

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年3月3日

查看全文
  • Weideren Dai,
  • Jinhua Li,
  • Yanzhuo Gou,
  • Jiaqi Zhang,
  • Zexun Pan,
  • Xianglong Li,
  • Haojun Hu,
  • Shulin Wang,
  • Tao Mei,
  • Xianbao Wang,
  • Chao Chen,
  • Qidong Tai,
  • Jingbi You

摘要

The intrinsic phase instability of CsPbI3 perovskites necessitates stringent fabrication conditions, significantly hindering the practical deployment. In the DMA-mediated CsPbI3 nucleation system, the Cs+/DMA+ ion exchange critically governs the resulting film quality. Here, we employ a moisture-responsive crystallization strategy utilizing propyltriethoxysilane (PTES) to deposite CsPbI3 under ambient air with high humidity (55%). We demonstrate that the siloxane groups can capture DMA+ in the intermediate DMAPbI3, facilitating DMA+ extraction and Cs+ incorporation, thereby accelerating crystallization kinetics. This approach enables CsPbI3 PSCs to achieve a power conversion efficiency (PCE) of 21.00% with an impressive fill factor (FF) of 86.1% while processing perovskite under relative humidity (RH) of 55%. Higher PCEs of 21.85% and 22.60% (certified 22.02%) were achieved for devices fabricated at a lower RH of 25% and for films spin-coated under an N2 atmosphere followed by annealing in ambient air, respectively. Furthermore, PTES-treated devices exhibit excellent operational stability under ambient conditions.