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<p>Near-infrared and short-wave infrared dual-band detection has emerged as a pivotal enabling technology in across diverse applications spanning material identification, biological diagnostics, and machine vision. Current dual-band device architectures based on vertically stacked photodetectors such as those employing two-dimensional materials or back-illuminated colloidal quantum dots remain constrained by limited large-area manufacturability and incompatibility with standard readout integrated circuits. Here, we report a top-illuminated p-i-n-i-p dual-band photodetector using two distinct sizes of solution-processed PbS colloidal quantum dots, which enables bias-switchable spectral response between near-infrared and short-wave infrared regimes. The device achieves a specific detectivity exceeding 1×10<sup>11 </sup>cm·Hz<sup>1/2</sup>·W<sup>−1</sup> in both bands, with short-wave infrared crosstalk of 0.5% and near-infrared crosstalk of 7.7%. The successful fabrication of a monolithic integrated 128×128 dual-band focal plane array showcases a functional dual-band infrared imager. This work establishes a scalable and silicon-compatible platform toward high-performance, low-cost dual-band infrared imagers.</p>

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Dual-Band Infrared PbS Colloidal Quantum Dot Focal Plane Array

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月3日

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  • Yunxiang Di,
  • Kun Ba,
  • Lingfeng Ye,
  • Qianru Zhao,
  • Xingyu Qi,
  • Weiyi Tang,
  • Hanting Wang,
  • Yi Long,
  • Yan Chen,
  • Xudong Wang,
  • Zhangcheng Huang,
  • Shenyang Huang,
  • Yun Tang,
  • Tie Lin,
  • Hong Shen,
  • Xiangjian Meng,
  • Hugen Yan,
  • Qi Liu,
  • Jianlu Wang,
  • Junhao Chu,
  • Ming Liu

摘要

Near-infrared and short-wave infrared dual-band detection has emerged as a pivotal enabling technology in across diverse applications spanning material identification, biological diagnostics, and machine vision. Current dual-band device architectures based on vertically stacked photodetectors such as those employing two-dimensional materials or back-illuminated colloidal quantum dots remain constrained by limited large-area manufacturability and incompatibility with standard readout integrated circuits. Here, we report a top-illuminated p-i-n-i-p dual-band photodetector using two distinct sizes of solution-processed PbS colloidal quantum dots, which enables bias-switchable spectral response between near-infrared and short-wave infrared regimes. The device achieves a specific detectivity exceeding 1×1011 cm·Hz1/2·W−1 in both bands, with short-wave infrared crosstalk of 0.5% and near-infrared crosstalk of 7.7%. The successful fabrication of a monolithic integrated 128×128 dual-band focal plane array showcases a functional dual-band infrared imager. This work establishes a scalable and silicon-compatible platform toward high-performance, low-cost dual-band infrared imagers.