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<p>The demand for high-performance filters in next-generation wireless communication systems underscores the limited electromechanical coupling of aluminum nitride-based film bulk acoustic resonators. Scandium incorporation enhances piezoelectricity but is hindered by crystallinity degradation and polarity inversion. Theoretical modeling reveals the polarity inversion interface between aluminum nitride and scandium-doped aluminum nitride as a key cause of piezoelectric degradation. This work proposes a dual-optimization strategy that improves crystalline alignment and eliminates polarity mismatch. A single-crystalline aluminum nitride seed layer promotes high <i>c</i>-axis oriented scandium-doped aluminum nitride films, yielding resonators with a maximum quality factor of 736. Subsequent seed layer removal eliminates the polarity inversion interface, raising the effective electromechanical coupling coefficient of resonators from 6.0% to 13.2%. Filters fabricated with this strategy achieve a center frequency of 6.4 GHz, a 3 dB bandwidth of 740 MHz, and out-of-band rejection above 40 dB, indicating potential for Sub-7 GHz communication systems.</p>

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Enhancing film bulk acoustic resonators performance by optimizing AlN seed layer crystallinity and polarity alignment

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月6日

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  • Tingting Yang,
  • Qinwen Xu,
  • Yaxin Wang,
  • Yao Cai,
  • Haiyang Li,
  • Yupeng Zheng,
  • Min Zeng,
  • Jingyi Qu,
  • Lei Li,
  • Chao Gao,
  • Xiyu Gu,
  • Binghui Lin,
  • Shishang Guo,
  • Cheng Lei,
  • Sheng Liu,
  • Chengliang Sun

摘要

The demand for high-performance filters in next-generation wireless communication systems underscores the limited electromechanical coupling of aluminum nitride-based film bulk acoustic resonators. Scandium incorporation enhances piezoelectricity but is hindered by crystallinity degradation and polarity inversion. Theoretical modeling reveals the polarity inversion interface between aluminum nitride and scandium-doped aluminum nitride as a key cause of piezoelectric degradation. This work proposes a dual-optimization strategy that improves crystalline alignment and eliminates polarity mismatch. A single-crystalline aluminum nitride seed layer promotes high c-axis oriented scandium-doped aluminum nitride films, yielding resonators with a maximum quality factor of 736. Subsequent seed layer removal eliminates the polarity inversion interface, raising the effective electromechanical coupling coefficient of resonators from 6.0% to 13.2%. Filters fabricated with this strategy achieve a center frequency of 6.4 GHz, a 3 dB bandwidth of 740 MHz, and out-of-band rejection above 40 dB, indicating potential for Sub-7 GHz communication systems.