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<p>The self-trapping of charge carriers, resulting in the formation of polarons, significantly restricts the separation and transport of charge carriers in photoelectrochemical systems. Herein, using bismuth vanadate as a model photoanode, we propose a surface-selective strategy to regulate hole polarons. Density functional theory calculations predict that substituting bismuth ions with indium ions suppresses hole polaron formation by weakening electron-phonon coupling. This substitution is achieved through a liquid-phase cation exchange method, enabling precise surface modification. The electron paramagnetic resonance, temperature-dependent photoluminescence spectroscopy, in situ irradiation X-ray photoelectron spectroscopy, and femtosecond time-resolved absorption spectroscopy all confirm the suppression of hole polaron formation. After loading co-catalyst, the optimized photoanode achieves a water-splitting photocurrent density of 6.46 mA cm<sup>-2</sup> at 1.23 V versus the reversible hydrogen electrode, with an applied bias photo-to-current efficiency of 2.19%. The unbiased tandem system exhibits a solar-to-hydrogen conversion efficiency of 6%. Here, we show that suppressing surface hole polaron formation facilitates hole carrier release, offering a pathway for enhancing photoelectrochemical performance.</p>

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Surface hole polaron site tuning governs charge carrier separation in BiVO4 photoanodes

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年2月10日

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  • Houjiang Liu,
  • Hongwei Cong,
  • Guijun Yang,
  • Chuangchuag Gong,
  • Jiawei Ding,
  • Yuan yuan Fu,
  • Jin Cui,
  • Kai Song,
  • Biao Chen,
  • Chunnian He,
  • Naiqin Zhao,
  • Jinhua Ye,
  • Fang He

摘要

The self-trapping of charge carriers, resulting in the formation of polarons, significantly restricts the separation and transport of charge carriers in photoelectrochemical systems. Herein, using bismuth vanadate as a model photoanode, we propose a surface-selective strategy to regulate hole polarons. Density functional theory calculations predict that substituting bismuth ions with indium ions suppresses hole polaron formation by weakening electron-phonon coupling. This substitution is achieved through a liquid-phase cation exchange method, enabling precise surface modification. The electron paramagnetic resonance, temperature-dependent photoluminescence spectroscopy, in situ irradiation X-ray photoelectron spectroscopy, and femtosecond time-resolved absorption spectroscopy all confirm the suppression of hole polaron formation. After loading co-catalyst, the optimized photoanode achieves a water-splitting photocurrent density of 6.46 mA cm-2 at 1.23 V versus the reversible hydrogen electrode, with an applied bias photo-to-current efficiency of 2.19%. The unbiased tandem system exhibits a solar-to-hydrogen conversion efficiency of 6%. Here, we show that suppressing surface hole polaron formation facilitates hole carrier release, offering a pathway for enhancing photoelectrochemical performance.