Scholarlink

<p>Advanced electronics in the post-Moore era require foundry-level performance enhancements. Carbon nanotube field-effect transistors, compatible with commercial silicon manufacturing, surpass the fundamental performance limits of silicon field-effect transistors. However, interface imperfections between carbon nanotubes and the dielectric cause poor gate controllability and current leakage. This work demonstrates that organic molecules near the carbon nanotubes can be mitigated by high-energy γ-ray irradiation. The treatment reduces off-state current density to 112.2 pA μm<sup>−1</sup>, approaching the 100 pA μm<sup>−1</sup> low-power target, and achieves an on/off ratio of ~10<sup>5</sup>. The quasi-gate-all-around architecture shows radiation tolerance up to 100 Mrad(Si), surpassing traditional silicon-based devices by over two orders of magnitude. This foundry-compatible strategy operates at room temperature with high throughput, advancing the practical application of nanotube transistors.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Boosting carbon nanotube transistors through γ-ray irradiation

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年1月21日

查看全文
  • Ke Zhang,
  • Ningfei Gao,
  • Jiahao Zhang,
  • Yang Li,
  • Jibo Zhao,
  • Daming Zhou,
  • Xinhe Wang,
  • Peng Liu,
  • Xiaoyang Lin,
  • Haitao Xu,
  • Lian-Mao Peng,
  • Weisheng Zhao

摘要

Advanced electronics in the post-Moore era require foundry-level performance enhancements. Carbon nanotube field-effect transistors, compatible with commercial silicon manufacturing, surpass the fundamental performance limits of silicon field-effect transistors. However, interface imperfections between carbon nanotubes and the dielectric cause poor gate controllability and current leakage. This work demonstrates that organic molecules near the carbon nanotubes can be mitigated by high-energy γ-ray irradiation. The treatment reduces off-state current density to 112.2 pA μm−1, approaching the 100 pA μm−1 low-power target, and achieves an on/off ratio of ~105. The quasi-gate-all-around architecture shows radiation tolerance up to 100 Mrad(Si), surpassing traditional silicon-based devices by over two orders of magnitude. This foundry-compatible strategy operates at room temperature with high throughput, advancing the practical application of nanotube transistors.