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<p>Constructing a low-resistance oxide protection layer is challenging but highly beneficial for realizing a practical photoelectrochemical device. The thickness of oxide layer strongly influences its behaviors of carrier transport and corrosion resistance, generally leading to a trade-off between efficiency and durability. Different from the previous methods, here we propose and demonstrate a universal approach to decouple the trade-off of oxide layer by multiple carrier-tunnelling paths. This approach with oxide/metal architecture ((O/M)<sub>n</sub>, n is the number of nano-scale repeating unit) enables low-resistance carrier transport as required for high efficiency, while allowing the layer to be sufficiently thick, which reinforces durability. This approach can be applied to various oxide-based layers, such as (TiO<sub>2</sub>/Fe)<sub>n</sub>, (CeO<sub>2</sub>/Fe)<sub>n</sub> and (TiO<sub>2</sub>/Pd)<sub>n</sub>. In addition, a good correlation between carrier dynamics and oxide/metal architecture is established by employing systematic photoelectrochemical-electrical measurements and simulation models. Here we show important contributions for further developing the practical photoelectrodes in photoelectrochemical devices and controlling the carrier transport behaviors in complex multilayer structure.</p>

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Multilayer oxide protection layer with multiple tunnelling paths for efficient and durable Si-based photocathode

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月17日

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  • Yang Zhou,
  • Zijie Cheng,
  • Yanhong Lyu,
  • Jinbo Wang,
  • Nataliya Tsud,
  • Viacheslav Kalinovych,
  • Roland De Marco,
  • Xiao Luo,
  • Yongmin He,
  • San Ping Jiang,
  • Jianyun Zheng

摘要

Constructing a low-resistance oxide protection layer is challenging but highly beneficial for realizing a practical photoelectrochemical device. The thickness of oxide layer strongly influences its behaviors of carrier transport and corrosion resistance, generally leading to a trade-off between efficiency and durability. Different from the previous methods, here we propose and demonstrate a universal approach to decouple the trade-off of oxide layer by multiple carrier-tunnelling paths. This approach with oxide/metal architecture ((O/M)n, n is the number of nano-scale repeating unit) enables low-resistance carrier transport as required for high efficiency, while allowing the layer to be sufficiently thick, which reinforces durability. This approach can be applied to various oxide-based layers, such as (TiO2/Fe)n, (CeO2/Fe)n and (TiO2/Pd)n. In addition, a good correlation between carrier dynamics and oxide/metal architecture is established by employing systematic photoelectrochemical-electrical measurements and simulation models. Here we show important contributions for further developing the practical photoelectrodes in photoelectrochemical devices and controlling the carrier transport behaviors in complex multilayer structure.