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<p>For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the miniaturization of electronic components, enabling the development of more efficient electronics. Here, we report on a large tunneling magnetoresistance of 1100% at a bias current of 1 nA and a giant anomalous zero-bias spin voltage effect in magnetic tunnel junctions based on 2D materials. The generation, manipulation and detection of electron spin across a nanometer-thick magnetic tunnel junction do not require any applied bias. The large zero-bias spin voltage signal exceeds 30,000%, which is far greater than the highest magnetoresistance signals reported to date. This non-equilibrium spin-engine state arises from the asymmetric diffusion of spin-up/spin-down electrons across the junction. It is driven by the built-in electric field of the junction and occurs under continuous energy exchange of the junction with the environment. Our findings reveal unexplored opportunities to transform and amplify spin information for low-power electronics.</p>

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Two-dimensional magnetic tunnel p-n junctions for low-power electronics

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月30日

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  • Wenkai Zhu,
  • Ziao Wang,
  • Tiangui Hu,
  • Zakhar R. Kudrynskyi,
  • Tong Zhou,
  • Zakhar D. Kovalyuk,
  • Ce Hu,
  • Hailong Lin,
  • Xiaodong Li,
  • Yongcheng Deng,
  • Quanshan Lv,
  • Lixia Zhao,
  • Amalia Patanè,
  • Igor Žutić,
  • Houzhi Zheng,
  • Kaiyou Wang

摘要

For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the miniaturization of electronic components, enabling the development of more efficient electronics. Here, we report on a large tunneling magnetoresistance of 1100% at a bias current of 1 nA and a giant anomalous zero-bias spin voltage effect in magnetic tunnel junctions based on 2D materials. The generation, manipulation and detection of electron spin across a nanometer-thick magnetic tunnel junction do not require any applied bias. The large zero-bias spin voltage signal exceeds 30,000%, which is far greater than the highest magnetoresistance signals reported to date. This non-equilibrium spin-engine state arises from the asymmetric diffusion of spin-up/spin-down electrons across the junction. It is driven by the built-in electric field of the junction and occurs under continuous energy exchange of the junction with the environment. Our findings reveal unexplored opportunities to transform and amplify spin information for low-power electronics.