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<p>Efficient and reliable spin injection at room temperature with scalability is crucial for spintronic applications but remains challenging. Direct ferromagnetic metal deposition on two-dimensional materials often leads to inefficient transparent contacts. Here, we introduce an indium buffer layer between ferromagnetic cobalt (Co) and graphene to establish high-efficiency van der Waals (vdW) tunnel contacts. This buffer layer facilitates a physisorption interface between Co and graphene with a well-defined vdW gap, which functions as an effective spin tunnel barrier. Through buffer layer thickness optimization, we achieved a room-temperature spin injection efficiency of approximately 25% in graphene, comparable to the best single-crystalline oxide-tunnel-barrier-based devices, alongside explicit nonlocal spin valve signals and Hanle spin precession. We further demonstrate the scalability of our approach through uniform performance across multi-channel graphene spin valves and its versatility by achieving efficient spin injection in semiconducting MoS<sub>2</sub> with an average efficiency of about 19.7%. Our strategy offers a simple, cost-efficient, and industry-compatible method for future large-scale and efficient spintronic applications.</p>

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Room-temperature high-efficiency spin injection via van der Waals tunnel contact

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月10日

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  • Shiming Huang,
  • Fuchen Hou,
  • Tingyu Qu,
  • Lianying Zhu,
  • Zhipeng Wang,
  • Bo Zhang,
  • Bosen Wang,
  • Chao Wang,
  • Guowen Yuan,
  • Xiao Chang,
  • Barbaros Özyilmaz,
  • Huolin Huang,
  • Feng Zhang,
  • Libo Gao,
  • Junhao Lin,
  • Deyi Fu,
  • Rong Zhang

摘要

Efficient and reliable spin injection at room temperature with scalability is crucial for spintronic applications but remains challenging. Direct ferromagnetic metal deposition on two-dimensional materials often leads to inefficient transparent contacts. Here, we introduce an indium buffer layer between ferromagnetic cobalt (Co) and graphene to establish high-efficiency van der Waals (vdW) tunnel contacts. This buffer layer facilitates a physisorption interface between Co and graphene with a well-defined vdW gap, which functions as an effective spin tunnel barrier. Through buffer layer thickness optimization, we achieved a room-temperature spin injection efficiency of approximately 25% in graphene, comparable to the best single-crystalline oxide-tunnel-barrier-based devices, alongside explicit nonlocal spin valve signals and Hanle spin precession. We further demonstrate the scalability of our approach through uniform performance across multi-channel graphene spin valves and its versatility by achieving efficient spin injection in semiconducting MoS2 with an average efficiency of about 19.7%. Our strategy offers a simple, cost-efficient, and industry-compatible method for future large-scale and efficient spintronic applications.