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<p>While significant progress has been made in the fabrication of n-type contacts for two-dimensional field-effect transistors (2D FETs), the development of high-performance p-type counterparts using compatible techniques remains insufficient to realize competitive complementary circuits. Here, we demonstrate the growth of metallic-phase tellurium (m-Te) on MoTe<sub>2</sub> via evaporation as an efficient p-type contact. The atomic arrangement at the Te/MoTe<sub>2</sub> interface stabilizes m-Te under ambient conditions, forming an atomically sharp van der Waals gap with optimal band alignment and suppressed metal-induced gap states. Combined with hole doping and tellurium vacancies compensation, the interface enables barrier-free hole injection. Bilayer MoTe<sub>2</sub> FETs employing m-Te contacts achieve a contact resistance as low as 1.6 kΩ μm, an on-state current up to 124 μA μm<sup>-1</sup>, and a maximum on/off ratio of 10<sup>7</sup>, which are among the best values obtained for p-type 2D FETs. Our work unveils metallic-phase chalcogen as a promising approach for contact optimization.</p>

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Metallic tellurium for p-type contacts of two-dimensional MoTe2 field-effect transistors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月13日

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  • Yuhan Zhu,
  • Feng Wang,
  • Shuhui Li,
  • Chen Shen,
  • Yuchen Cai,
  • Tao Yan,
  • Fuyuan Zhang,
  • Yanrong Wang,
  • Xueying Zhan,
  • Kai Xu,
  • Hao Wang,
  • Hongbin Zhang,
  • Zhenxing Wang,
  • Jun He

摘要

While significant progress has been made in the fabrication of n-type contacts for two-dimensional field-effect transistors (2D FETs), the development of high-performance p-type counterparts using compatible techniques remains insufficient to realize competitive complementary circuits. Here, we demonstrate the growth of metallic-phase tellurium (m-Te) on MoTe2 via evaporation as an efficient p-type contact. The atomic arrangement at the Te/MoTe2 interface stabilizes m-Te under ambient conditions, forming an atomically sharp van der Waals gap with optimal band alignment and suppressed metal-induced gap states. Combined with hole doping and tellurium vacancies compensation, the interface enables barrier-free hole injection. Bilayer MoTe2 FETs employing m-Te contacts achieve a contact resistance as low as 1.6 kΩ μm, an on-state current up to 124 μA μm-1, and a maximum on/off ratio of 107, which are among the best values obtained for p-type 2D FETs. Our work unveils metallic-phase chalcogen as a promising approach for contact optimization.