Scholarlink

<p>The exponential growth of global data traffic demands transformative solutions for data centers. While optical interconnects offer a promising pathway to overcome the bandwidth limitation, conventional electro-optic modulators face a bandwidth-footprint trade-off. Here, we demonstrate a silicon modulator by leveraging the slow-light effect in a photonic crystal nanobeam cavity. The proposed modulator exhibits a 110-GHz electro-optic bandwidth with an ultracompact footprint of 10 µm² while enabling precise light manipulation with an 80 pm/V tuning efficiency within a 0.12 µm³ mode volume. We also demonstrate 110-Gbps and 130-Gbps non-return-to-zero signal transmissions with bit error rates less than 3.8 × 10⁻³ and 2 × 10⁻², respectively, while maintaining a power consumption of 5.9 fJ/bit. This breakthrough represents an important advance in photonic interconnect technology, as it overcomes the critical trade-off between bandwidth and footprint while achieving an ultra-high energy efficiency, thereby paving the way for next-generation ultracompact, high-speed, and energy-efficient optical interconnects in data centers and beyond.</p>

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Ultracompact and large-bandwidth silicon modulator in a CMOS-compatible foundry

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年12月18日

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  • Hua Zhong,
  • Jingchi Li,
  • Yu He,
  • Hongwei Wang,
  • Yuqi Chen,
  • Yong Zhang,
  • Xingfeng Li,
  • Yuhan Du,
  • Yikai Su

摘要

The exponential growth of global data traffic demands transformative solutions for data centers. While optical interconnects offer a promising pathway to overcome the bandwidth limitation, conventional electro-optic modulators face a bandwidth-footprint trade-off. Here, we demonstrate a silicon modulator by leveraging the slow-light effect in a photonic crystal nanobeam cavity. The proposed modulator exhibits a 110-GHz electro-optic bandwidth with an ultracompact footprint of 10 µm² while enabling precise light manipulation with an 80 pm/V tuning efficiency within a 0.12 µm³ mode volume. We also demonstrate 110-Gbps and 130-Gbps non-return-to-zero signal transmissions with bit error rates less than 3.8 × 10⁻³ and 2 × 10⁻², respectively, while maintaining a power consumption of 5.9 fJ/bit. This breakthrough represents an important advance in photonic interconnect technology, as it overcomes the critical trade-off between bandwidth and footprint while achieving an ultra-high energy efficiency, thereby paving the way for next-generation ultracompact, high-speed, and energy-efficient optical interconnects in data centers and beyond.